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Hydrogen Assisted Remote Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Nitride Films

Published online by Cambridge University Press:  15 February 2011

P. Santos-Filho ,
K. Koh ,
G. Stevens  and
G. Lucovsky
P. Santos-Filho
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
K. Koh
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Stevens
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
G. Lucovsky
Affiliation:
Departments of Physics, Materials Science and Engineering and Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695–8202
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Abstract

We show that in the RPECVD process the addition of a small upstream flow of H2 gas, combined with the He injected into the plasma region of the reactor, promotes chemical exchange between H and D when the material was deposited from deuterated Silane and ammonia and densifies the a- Si:N:H network. We have deposited hydrogenated stoichiometric nitrides with and without H2 injected into the plasma region. For small H2 flows, the deuterated samples show Fourier transform infrared (FTIR) N-D and N-H stretching and bending modes that interchange their populations, as the total bonded hydrogen content in the films remain constant. The hydrogen assisted grown films show, for small H2 flows, a constant amount of bonded-H, an optical index of refraction n=1.85, and reduced etch rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 57
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

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