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Hydrogen and Lithium Passivation of Gold in Silicon: A Comparative Study

Published online by Cambridge University Press:  26 February 2011

E. ö. Sveinbjörnsson ,
S. Kristjansson ,
O. Engström  and
H. P. Gislason
E. ö. Sveinbjörnsson
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
S. Kristjansson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland
O. Engström
Affiliation:
Department of Solid State Electronics, Chalmers University of Technology, S-412 96 Göteborg, Sweden
H. P. Gislason
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland
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Abstract

We report studies of passivation of the gold center in silicon by hydrogen and lithium using deep level transient spectroscopy (DLTS), capacitance voltage (CV) profiling and secondary ion mass spectroscopy (SIMS). Both lithium and hydrogen are able to remove the electrical activity of the gold center from the silicon band gap but the passivation mechanisms are different. In the case of lithium the passivation is most likely due to a Coulomb attraction between lithium donors Li+ and gold acceptors Au−. No complex formation is observed between Li+ and Au0. In contrast, hydrogen is able to passivate the gold center without the need of opposite charge states of the species involved. Two Au-H complexes are observed, one (G) electrically active, and another (PA) passive. Based on the annealing kinetics of these complexes we propose that the active complex is a Au-H pair and that the passive complex contains two H atoms (Au-H2).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 371
Copyright
Copyright © Materials Research Society 1995

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