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Hrxrd Study of the Strain Properties of MBE-Grown ZnSe and ZnSTe on GaAs

Published online by Cambridge University Press:  22 February 2011

I.K. Sou ,
S.M. Mou ,
Y.W. Chan ,
G.C. Xu  and
G.K.L. Wong
I.K. Sou
Affiliation:
Department of Physics, Hong Kong University of Science and Technology, Hong Kong
S.M. Mou
Affiliation:
Department of Physics, Hong Kong University of Science and Technology, Hong Kong
Y.W. Chan
Affiliation:
Department of Physics, Hong Kong University of Science and Technology, Hong Kong
G.C. Xu
Affiliation:
Department of Physics, Hong Kong University of Science and Technology, Hong Kong
G.K.L. Wong
Affiliation:
Department of Physics, Hong Kong University of Science and Technology, Hong Kong
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Abstract

We have studied the structural properties of MBE-grown ZnSe/GaAs and ZnSTe/GaAs heterostructures using high resolution X-ray diffraction (HRXRD). The transition from pseudomorphic to partially and then fully relaxed strained layers is observed as a function of ZnSe layer thickness. The critical thickness for the on-set of strained relaxation for ZnSe on GaAs(001) is determined to be between 1600 and 1850 Å. Using a simulation program based on the dynamical theory, the poisson's ratio of ZnSe is accurately determined to be v=0.380±0.002. A set of ZnSl-xTex epilayers with 0 ≤ × ≤ 1 was grown on GaAs by MBE for the first time. A linear dependence of the lattice constant upon Te composition is found, which agrees well with the Vegard's Law. The characteristic behaviors of inclination between the layer and substrate planes as a function of layer thickness has been studied on both ZnSe/GaAs and ZnSTe/GaAs systems. The atomic planes of both ZnSe and ZnSTe layers are observed to tilt from those of the GaAs substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 481
Copyright
Copyright © Materials Research Society 1994

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References

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