Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-27T02:32:32.531Z Has data issue: false hasContentIssue false

Hrem Investigation of the Structure of the σ5(310)/[001] Symmetric Tilt Grain Boundary In Nb.*

Published online by Cambridge University Press:  26 February 2011

Wayne E. King
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, sLivermore, CA 94550
G. H. Campbell
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, sLivermore, CA 94550 Sandia National Laboratories, Livermore, CA 94551
A. Coombs
Affiliation:
Chemistry and Materials Science Department, Lawrence Livermore National Laboratory, sLivermore, CA 94550
M. J. Mills
Affiliation:
Max Planck Institut für Metallforschung, Institut für Werkstoffwissenschaft, Stuttgart, Germany
M. RüHle
Affiliation:
Sandia National Laboratories, Livermore, CA 94551
Get access

Abstract

Recent atomistic simulations using interatomic potentials for Nb developed employing the embedded atom method (EAM) and the model generalized pseudopotential theory (MGPT) have indicated a possible cusp at the Σ5(310) orientation in the energy vs tilt angle curves for<001> symmetric tilt grain boundaries. In addition, the most stable structure predicted using EAM exhibits shifts of one crystal relative to the other along the tilt axis and along the direction perpendicular to the tilt axis lying in the boundary plane. The structure predicted using the MGPT was mirror symmetric across the plane of the grain boundary. This boundary has been prepared for experimental study using the ultra high vacuum diffusion bonding method. A segment of this boundary has been studied using high resolution electron microscopy.

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Foiles, S. M., Daw, M. S. and Phillips, R. B. in Defects in Materials, edited by Bristowe, P. D., Epperson, J. E., Griffith, J. E. and Liliental-Weber, Z. (Mat. Res. Soc. Symp. Proc. 209, Pittsburgh, PA 1990).Google Scholar
2. Moriarty, J. A., Phys. Rev. B, 42, 1609, (1990).Google Scholar
3. Fischmeister, H. F., Mader, W., Gibbesch, B. and Elssner, G. in Interfacial Structure, Properties, and Design, edited by Yoo, M. H., Clark, W. A. T. and Briant, C. L. (Mat. Res. Soc. Symp. Proc. 122, Pittsburgh, PA 1988) pp. 529540.Google Scholar
4. O'Keefe, M. A., Dahmen, U. and Hetherington, C. J. D. in Atomic Scale Structure of Interfaces, edited by Bringans, R. D., Feenstra, R. M. and Gibson, J. M. (Mat. Res. Soc. Symp. Proc. 159, Pittsburgh, PA 1990) pp. 453458.Google Scholar