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Hreels Study of the Adsorption of Organometallics on GaAs(001) Surfaces

Published online by Cambridge University Press:  16 February 2011

A. Närmann ,
R. J. Purtell  and
M. L. Yu
A. Närmann
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY
R. J. Purtell
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY
M. L. Yu
Affiliation:
IBM Research Division, T. J. Watson Research Center, Yorktown Heights, NY
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Abstract

Trimethylgallium (TMGa), Triethylgallium (TEGa) and Diethylgalliumchloride (DEGaCl) are used in combination with arsine (AsH3) in atomic layer epitaxy of GaAs. We simulated this process in a UHV system by dosing a c(2×8) or (1×6) reconstructed GaAs(001) surface with arsine and organometallics at different temperatures. After the surface reconstruction was verfied by LEED, the sample was transferred in situ to the HREELS (high resolution electron energy loss spectroscopy) chamber. We present new studies on the adsorption and pyrolysis of organometallics on GaAs(001) surfaces.

As a result we find that TMGa adsorbs molecularly on an As-rich cooled surface but decomposes upon adsorption on a Ga-stabilized (1×6) surface. These two adsorption states are identified by the geometrical position of the Gamethyl compound on the surface (Ga-C bond parallel or normal to the surface). The removal of the adsorbed species occurs on an As-rich surface at temperatures higher than 450°C and on the Ga-stabilized surface at 350°C.

For TEGa and DEGaCl we found similar results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 41
Copyright
Copyright © Materials Research Society 1991

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References

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