Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T01:55:02.309Z Has data issue: false hasContentIssue false

How Rapid Isothermal Processing Can be a Dominant Semiconductor Processing Technology in the 21st Century

Published online by Cambridge University Press:  10 February 2011

R. Singh
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
R. Sharangpani
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
K. C. Cherukuri
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
Y. Chen
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
D. M. Dawson
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
K. F. Poole
Affiliation:
Clemson University, Department of Electrical and Computer Engineering, Clemson, SC 29634
A. Rohatgi
Affiliation:
Georgia Institute of Technology, School of Electrical Engineering, Atlanta, GA 30332
S. Narayanan
Affiliation:
Solarex, Frederick, MD 21701
R. P. S. Thakur
Affiliation:
Micron Technology Inc., Boise, ID 83706
Get access

Abstract

The growth and advancement of the electronic and photonic industry in the 21 st century hinges on revolutionary new processing techniques that will overcome some of the most fundamental limitations of conventional methods. Rapid isothermal processing (RIP) based on incoherent radiation as the source of optical and thermal energy can play a major role in designing processing systems that offer the tight process control, low thermal budgets, low microscopic defects, high throughput and high yields required for almost every semiconductor device. Conventional RIP can be further optimized by fully exploiting the contribution of quantum photoeffects. The improved performance and reliability offered by RIP will make it the mainstream technology for the green manufacture of microelectronics, optoelectronics, solar cells, flat panel displays and microelectromechanical systems. Key issues related to the cost of ownership, design of RIP system based on the full utilization of photo–thermal effects and model based control systems are described. New experimental results for a number of processing steps are provided. These results demonstrate the importance of advanced RIP systems in providing better performance and lower defects for future devices.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Singh, R., J. Appl. Phys., 63, R59–R114 (1988)Google Scholar
[2] Kroemer, H., Quantum Mechanics, Prentice Hall, N.J., 5 (1994)Google Scholar
[3] Singh, R., Electronics, 58, 19 (Dec 15, 1985)Google Scholar
[4] Singh, R., Semiconductor International, 9(1), 28 (1986)Google Scholar
[5] Singh, R., Chou, P., Radpour, F., Nelson, A. J., and Ullal, H. S., J. Appl. Phys., 66, 2381 (1989)Google Scholar
[6] Singh, R. et al. , Appl. Phys. Lett., 58, 1217 (1991)Google Scholar
[7] Singh, R., Proc. International Conference on Beam Processing of Advanced Materials, published by TMS, 619 (1993)Google Scholar
[8] Mavoori, J. et al. , Appl. Phys. Lett., 65, 1935 (1994)Google Scholar
[9] Singh, R. and Thakur, R. P. S., The Electrochem. Soc. Interface, 4, 28 (1995)Google Scholar
[10] Singh, R., in Handbook of Compound Semiconductors, Noyes Publications, N.J., 442 (1995)Google Scholar
[11] Moslehi, M. M. et al. , Solid State Technology, p. 34 (Jan 1994)Google Scholar
[12] Reid, K. G. and Sitaram, A. R., Solid State Technology, p. 63 (Feb 1996)Google Scholar
[13] Dance, D. L. and Jimenez, D. W., Semiconductor International, 6, (Sept. 1995).Google Scholar
[14] Thakur, R. P. S., Rapid Thermal Processing and UJLSI Electronics, in Semiconductor Fab Tech., Spring 1996 (In Press)Google Scholar
[15] Kemp, K. G., Frost, D. F. and Poole, K. F., IEEE Trans. Reliability, 39, 26 (1990)Google Scholar
[16] Poole, K. F., in Electronic Component Reliability, by Jensen, F., John Wiley & Sons, N.Y., chapter 11 (1995)Google Scholar
[17] Moosa, M. S., Poole, K. F. and Grams, M. L., Proc. 7th International Conference Quality in Electronic Components, France (1995)Google Scholar
[18] Singh, R. et al. , Mat. Res. Soc., Symposia proc., 224, 197 (1991)Google Scholar
[19] Dawson, D. M. et al. , IEEE Trans. Control System Technol., 2, 233 (1994)Google Scholar
[20] Qu, Z., Dorsey, J. F. and Dawson, D. M., IEEE Trans. Automatic Control, 39, 2219 (1994)Google Scholar
[21] Carroll, J. J. and Dawson, D. M., IEEE Trans. Industrial Applications, 31, 248 (1995)Google Scholar
[22] Jellison, G.E. Jr, and Modine, F. A., J. Appl. Physics, 39(1), 3758 (1994)Google Scholar
[23] Timans, P. J., J. Appl. Phys., 74(10) 6356 (1993).Google Scholar
[24] Atkins, P. W., Physical Chemistry, W.H.Freeman & Co., N.Y., 294, (1990).Google Scholar
[25] Suppan, P., Principles of Photochemistry, Chemical Society, London, 6 (1973).Google Scholar
[26] Tu, K. N., Mayer, J. W., and Feldman, L. C., Electronic Thin Film Science for Electrical Engineers and Materials Scientists, Macmillan Publishing Company, N.Y, 46, (1992).Google Scholar
[27] Kiv, A. E. and Umarova, F. T., Sov. Phys. Semicond., 7(9), 474, (1970).Google Scholar
[28] Yamazaki, T., Watanabe, S., and Ito, T., J. Electrochem. Soc., 137(1), 313, (1990).Google Scholar
[29] Sharangpani, R. et al. , Mat. Res. Soc. Proc., 381, 117 (1995)Google Scholar
[30] Singh, R. and Sharangpani, R., Proc. 2ndInt. Dielectrics for VLSI/ULSI Multilevel Interconnect Conf., 78 (1996)Google Scholar
[31] Singh, R. et al. , IEEE Trans. Appl. Superconductors, 3, 1 (1993)Google Scholar
[32] Singh, R., Alamgir, S. and Sharangpani, R., Appl. Phys. Lett., 67, 3939 (1995)Google Scholar
[33] Chen, Z., J. Appl. Phys., 74, 2856 (1993)Google Scholar
[34] Nissim, Y. et al. , Appl. Phys. Lett., 59, 656 (1991)Google Scholar
[35] Sharangpani, R. et al. , Proc. 8th Int. Conf. InP and Related Materials held at Schwabish Gmund, Germany (In Press), (1996)Google Scholar