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Hot-Wire CVD Poly-Silicon Films for Thin Film Devices

Published online by Cambridge University Press:  10 February 2011

J.K. Rath ,
F.D. Tichelaar ,
H. Meiling  and
R.E.I. Schropp
J.K. Rath
Affiliation:
Debye Institute, Utrecht University, P.O.Box 80000, 3508 TA Utrecht, the Netherlands
F.D. Tichelaar
Affiliation:
National centre for HREM, Rotterdamseweg 137, 2628 AL Delft, the Netherlands
H. Meiling
Affiliation:
Debye Institute, Utrecht University, P.O.Box 80000, 3508 TA Utrecht, the Netherlands
R.E.I. Schropp
Affiliation:
Debye Institute, Utrecht University, P.O.Box 80000, 3508 TA Utrecht, the Netherlands
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Abstract

Solar cell using profiled poly-Si:H by HWCVD as i-layer in the configuration SS/n-µSi:H(PECVD)/i-poly-Si:H(HWCVD)/p-µc-Si:H(PECVD)/ITO showed 3.7% efficiency. A current of 23.6 mA/cm2 was generated in only 1.5 µm thick poly-Si:H i-layer grown at ∼5Å/s. TFTs made with the poly-Si:H films (grown at ≥ 9Å/s) exhibited remarkable stability to long duration of 23 hours of gate bias stress of ∼lMV/cm. A saturation mobility of 1.5 cm2/Vs for the TFT has been achieved. Films made at low hydrogen dilution (Poly2) showed device quality (purely intrinsic nature, ambipolar diffusion length of 568 nm, only (220) oriented growth and low ESR defect density of <1017/cm3with complete absence of signal due to conduction electrons) but with an incubation phase of amorphous initial growth, whereas the films made at high hydrogen dilution (Polyl) had a polycrystalline initial growth, though with higher defect density, incorporated oxygen and randomly oriented grains. Poly2 films are compact and hydrogen bonding is at compact Si-H sites manifested as 2000 cm−1IR vibration and high temperature hydrogen evolution peak. Exchange interaction of spins and spin pairing are observed while increasing defects in such a compact structure. A new approach has been used to integrate these two regimes of growth to make profiled poly-Si:H layers. The new layers show good electronic properties as well as complete elimination of incubation phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 879
Copyright
Copyright © Materials Research Society 1998

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