Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T02:30:15.030Z Has data issue: false hasContentIssue false
  • English
  • Français

Hot Wall Isothermal RTP for Gate Oxide Growth and Nitridation

Published online by Cambridge University Press:  14 March 2011

Allan Laser ,
Christopher Ratliff ,
Jack Yao ,
Jeff Bailey ,
Jean-Claude Passefort ,
Eric Vaughan  and
Larry Page
Allan Laser
Affiliation:
Silicon Valley Group, Thermal Systems Division, Scotts Valley, CA 95066, U.S.A.
Christopher Ratliff
Affiliation:
Silicon Valley Group, Thermal Systems Division, Scotts Valley, CA 95066, U.S.A.
Jack Yao
Affiliation:
Silicon Valley Group, Thermal Systems Division, Scotts Valley, CA 95066, U.S.A.
Jeff Bailey
Affiliation:
Silicon Valley Group, Thermal Systems Division, Scotts Valley, CA 95066, U.S.A.
Jean-Claude Passefort
Affiliation:
Silicon Valley Group, Thermal Systems Division, Scotts Valley, CA 95066, U.S.A.
Eric Vaughan
Affiliation:
Silicon Valley Group, Thermal Systems Division, Scotts Valley, CA 95066, U.S.A.
Larry Page
Affiliation:
Silicon Valley Group, Thermal Systems Division, Scotts Valley, CA 95066, U.S.A.
Get access

Abstract

A new system that incorporates many benefits of large batch furnaces (high quality films, growth of wet and dry oxides, chlorine capability, and low cost) into a single wafer processing module has been developed at SVG Thermal Systems. The problems associated with wafer temperature measurement and control in traditional lamp based RTP systems are avoided by utilizing a hot wall isothermal processing chamber. Unique fixturing is used to minimize thermal stress on the wafer during ramping. High quality gate oxides ranging in thickness from 20Å to 40Å have been grown in this system using both wet and dry oxidation ambients, with and without chlorine. Thin oxides grown in dry oxygen had 1-sigma uniformities in the range of 0.72-0.95%, while oxides grown in oxygen/HCl (1-3%) had uniformities of 0.80%. Steam grown oxides demonstrated growth rates of 100Å/min at 900°C and uniformities of 0.62%. Dry oxides annealed in NO and N2O had peak nitrogen incorporation levels ranging from 0.5 to 5.1 atomic percent depending on anneal ambient, temperature and time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 611: Symposium C – Gate Stack & Silicide Issues in Silicon Processing , 2000 , C7.7.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pomp, H.G. et al. , IEDM Tech Dig. p. 463 (1993).Google Scholar
2. Hwang, H. et al. , Applied Phys. Lett. 57, 3 (1990).Google Scholar
3. Kuehne, J. et al. , Rapid Thermal and Integrated Processing VI, (Materials Research Society Symposium Proceedings) 470, 387 (1997).Google Scholar
4. Trademark of Hologenix, 15301 Connector Lane, Huntington Beach, CA.Google Scholar
5. d'Aragona, F. Secco, J. Electrochem. Soc. 119, 948 (1972).10.1149/1.2404374Google Scholar