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Hot Embossing Lithography: Release Layer Characterization by Chemical Force Microscopy

Published online by Cambridge University Press:  01 February 2011

Neil S. Cameron ,
Arnaud Ott ,
Hélène Roberge  and
Teodor Veres
Neil S. Cameron
Affiliation:
IMI: National Research Council Canada, 75 blvd de Mortagne, Boucherville, QC, J4B 6Y4, Canada
Arnaud Ott
Affiliation:
IMI: National Research Council Canada, 75 blvd de Mortagne, Boucherville, QC, J4B 6Y4, Canada ESIREM, Aile des Sciences de l'Ingénieur 9, avenue Alain Savary, BP 47870, 21078 Dijon cedex, France
Hélène Roberge
Affiliation:
IMI: National Research Council Canada, 75 blvd de Mortagne, Boucherville, QC, J4B 6Y4, Canada
Teodor Veres
Affiliation:
IMI: National Research Council Canada, 75 blvd de Mortagne, Boucherville, QC, J4B 6Y4, Canada
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Abstract

Hot embossing lithography is a powerful method of replicating three-dimensional micro-and nano-structures (see Figure 1) using a stamp that is pressed into a heat-softened polymer resin. Cooling below the glass-transition temperature (Tg) of the polymer cures the motifs and the stamp and substrate are then separated. Successful replication is therefore contingent on interfacial interactions during the embossing phase and most importantly during the separation or release phase. Various organo- and perfluoro-silane release layers have been proposed and studied.

We have employed variable temperature chemical force microscopy (VT-CFM) using tips silanized with four different SAMs interacting with a thin-film of poly(cyclic olefin), (PCO). The silanized-tip/polymer interaction was studied over a temperature range spanning the Tg of the PCO (∼373 K). Adhesion between a saturated hydrocarbon-decorated tip (OTS) and PCO was comparatively strong (170 nN) 30 K above the Tg of the polymer. Adhesion among the perfluorinated tips was 20 to 50 nN lower at 373 K with a relative increase in perfluoromethyl groups (w/w).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J12.2
Copyright
Copyright © Materials Research Society 2005

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