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Hot Electron Phenomena in Transport Across Metal-Semiconductor Structures

Published online by Cambridge University Press:  21 February 2011

R. Ludeke  and
A. Bauer
R. Ludeke
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y. 10598
A. Bauer
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, N.Y. 10598
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Abstract

Ballistic Electron Emission Microscopy (BEEM) is shown to be a versatile spectroscopic tool to investigate scattering phenomena of energetic electrons. Two examples are given for obtaining numerical values of scattering parameters. Thus the elastic and inelastic mean free paths are deduced from model fits to attenuation data for thin Pd films deposited on Si(111) and Si(100) substrates. In the second example, the quantum yield for electron-hole pair production through impact ionization of hot carriers injected into Si(111) is directly measured over an energy range from 1-7 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 318: Symposium Ca – Interface Control of Electrical, Chemical, and Mechanical Properties , 1993 , 117
Copyright
Copyright © Materials Research Society 1994

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References

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