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Homo-Epitaxial Growth on Misoriented GaN Substrates by MOCVD

Published online by Cambridge University Press:  03 September 2012

A.R.A. Zauner ,
J.J. Schermer ,
W.J.P. van Enckevort ,
V. Kirilyuk ,
J.L. Weyher ,
I. Grzegory ,
P.R. Hageman  and
P.K. Larsen
A.R.A. Zauner
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525ED Nijmegen, The Netherlands
J.J. Schermer
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525ED Nijmegen, The Netherlands
W.J.P. van Enckevort
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525ED Nijmegen, The Netherlands
V. Kirilyuk
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525ED Nijmegen, The Netherlands
J.L. Weyher
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525ED Nijmegen, The Netherlands High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
I. Grzegory
Affiliation:
High Pressure Research Center, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
P.R. Hageman
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525ED Nijmegen, The Netherlands
P.K. Larsen
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld, 6525ED Nijmegen, The Netherlands
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Abstract

The N-side of GaN single crystals with off-angle orientations of 0°, 2°, and 4° towards the [1010] direction was used as a substrate for homo-epitaxial MOCVD growth. The highest misorientation resulted in a reduction of the density of grown hillocks by almost two orders of magnitude as compared with homo-epitaxial films grown on the exact (0001) surface. The features still found on the 4° misoriented sample after growth can be explained by a model involving the interaction of steps, introduced by the misorientation and the hexagonal hillocks during the growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W6.3
Copyright
Copyright © Materials Research Society 1999

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References

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