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Homoepitaxial growth of CVD diamond: effect of nitrogen contaminations on growth rates

Published online by Cambridge University Press:  10 February 2011

C. Wild ,
R. Locher  and
P. Koidl
C. Wild
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
R. Locher
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
P. Koidl
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, D-79108 Freiburg, Germany
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Abstract

Homoepitaxial diamond films were deposited on {100} and {111} oriented substrates using microwave plasma assisted CVD. The growth rate was measured in situ using laser interferometry. Various amounts of 15N2 were admixed to the process gas (0-50 ppm). The growth rate on {100} faces was found to increase significantly (by a factor 1.8) with increasing 15N2 content. In contrast, on { 111 } faces only a minor increase of the growth rate upon nitrogen admixture was observed. These findings are in perfect agreement with the observed influence of nitrogen contaminations on the α-parameter, as derived by the X-ray texture analysis of polycrystalline diamond films [1]

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 75
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

[1] Locher, R., Wild, C., Herres, N., and Koidl, P. Appl. Phys. Lett. 65, 34 (1994)Google Scholar
[2] MÜller-Sebert, W., Wörner, E., Fuchs, F., Wild, C. and Koidl, P. Appl. Phys. Lett., in printGoogle Scholar
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[8] Maier, K., PhD-Thesis, University Freiburg (1994)Google Scholar