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Homo-Epitaxial and Selective Area Growth of 4H and 6H Silicon Carbide Using a Resistively Heated Vertical Reactor

Published online by Cambridge University Press:  10 February 2011

Ebenezer Eshun ,
Crawford Taylor ,
M. G. Spencer ,
Kevin Kornegay ,
Ian Ferguson ,
Alex Gurray  and
Rick Stall
Ebenezer Eshun
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, DC 20059
Crawford Taylor
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, DC 20059
M. G. Spencer
Affiliation:
Howard University, Materials Science Research Center of Excellence, Washington, DC 20059
Kevin Kornegay
Affiliation:
Department of Electrical Engineering, Cornell University, Ithaca, NY 14853
Ian Ferguson
Affiliation:
EMCORE Corporation, SOMMERSET, NJ 08873.
Alex Gurray
Affiliation:
EMCORE Corporation, SOMMERSET, NJ 08873.
Rick Stall
Affiliation:
EMCORE Corporation, SOMMERSET, NJ 08873.
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Abstract

Silicon carbide technology is rapidly developing into a production process. This is due to rapid progress in the development of high quality epitaxy and substrates. We report on the development of a resistively heated vertical reactor and it's application to homo-epitaxy and selective area growth. Epitaxial growth of 4H and 6H-SiC requires high temperatures (in excess of 1500°C). In this work we investigate resistive heating which offers advantages in cost, temperature uniformity and power efficiency of heating. However, resistive heating presents major technological challenges. Due to the power efficiencies possible with resistive heating we are able to obtain temperatures in excess of 1750°C. Using this system we have grown “state of the art” 4H and 6H-SiC. At 1580°C our background doping is p-type at a level of 3–5×1015cm−3 as measured by capacitance techniques in agreement with earlier results presented by investigators from Siemens Corp using a similar system. The background concentration increases by about an order of magnitude at 1680°C. This system has also been used to perform experiments with selective area growth of SiC using a graphite mask. This masking technology allows for the growth of SiC in specific regions at elevated temperature in excess of 1600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 173
Copyright
Copyright © Materials Research Society 1999

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References

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