Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-25T15:53:55.219Z Has data issue: false hasContentIssue false
  • English
  • Français

Hole Transport In Self-Organized Oligosilane Thin Films With Highly Ordered Hopping Sites

Published online by Cambridge University Press:  15 March 2011

H. Okumoto ,
T. Yatabe ,
A. Richter ,
M. Shimomura ,
A. Kaito  and
N. Minami
H. Okumoto
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
T. Yatabe
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
A. Richter
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
M. Shimomura
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
A. Kaito
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
N. Minami
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
Get access

Abstract

Self-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of -conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhenius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 708: Symposium BB – Organic Optoelectronic Materials, Processing and Devices , 2001 , BB10.46
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Adam, D., Schuhmacher, P., Simmerer, J., Haussling, L., Siemensmeyer, K., Etzbach, K. H., Ringsdorf, H., and Haarer, D., Nature 371, 141 (1994).Google Scholar
2. Funahashi, M. and Hanna, J., Phys. Rev. Lett. 78, 2184 (1997).Google Scholar
3. Pope, M. and Swenberg, C., in Electronic Processes in Organic Crystals and Polymers (2nd Ed.) (Oxford University Press, New York, 1999), Chap. XI.Google Scholar
4. Kepler, R. G., Zeigler, J. M., Harrah, L. A., and Kurtz, S. R., Phys.Rev. B 35, 2818 (1987).Google Scholar
5. Abkowitz, M., Bäassler, H., and Stolka, M., Philos. Mag. B 63, 201 (1991).Google Scholar
6. Okumoto, H., Yatabe, T., Shimomura, M., Kaito, A., Minami, N., and Tanabe, Y., Adv. Materials 13, 72 (2001).Google Scholar
7. Okumoto, H., Yatabe, T., Peng, J., Kaito, A., and Minami, N., Synth. Met. 121, 1507 (2001).Google Scholar
8. Yatabe, T., Kaito, A., and Tanabe, Y., Chem. Lett. 799 (1997).Google Scholar
9. Yatabe, T., Kanaiwa, T., Sakurai, H., Okumoto, H., Kaito, A., and Tanabe, Y., Chem. Lett. 345 (1998).Google Scholar
10. Yatabe, T., Minami, N., Okumoto, H., and Ueno, K., Chem. Lett. 742 (2000).Google Scholar
11. Bäassler, H., Borsenberger, P. M., and Perry, R. J., J. Polym. Sci.: Part B: Polym. Phys. 32, 1677 (1994).Google Scholar
12. Bäassler, H., Phys. Stat. Sol. (b) 175, 15 (1993).Google Scholar
13. Borsenberger, P. M., Magin, E. H., Auweraer, M., and Schryver, F. C., Phys. Stat. Sol. (a) 140, 9 (1993).Google Scholar
14. Borsenberger, P. M., Pautmeier, L.T., and Bäassler, H., Phys.Rev. B 48, 3066 (1993).Google Scholar