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Hole Transport in Self-Organized Oligosilane Thin Films with Highly Ordered Hopping Sites

Published online by Cambridge University Press:  21 March 2011

H. Okumoto
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
T. Yatabe
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
A. Richter
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
M. Shimomura
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
A. Kaito
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
N. Minami
Affiliation:
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan
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Abstract

Self-organized oligosilane thin films possess molecular orientation normal to substrates with multilayered structure. This unique order of σ-conjugated molecules results in good hole transport properties. In the present work, carrier transport properties at low temperature are studied for 1,10-diethyldecamethylsilane polycrystalline films. Even at a temperature as low as 173 K, a time-of-flight transient photocurrent waveform showed a clear plateau and a sharp decay, whose shape is similar to that at room temperature. Their hole mobility followed Arrhe-nius type temperature dependence with a small activation energy of 0.09 eV. The hole mobility of 6.3×10-5cm-2/Vs at 193 K was more than 2 orders of magnitude higher than that of typical polysilanes, which inevitably contain disordered structures hindering smooth carrier transport.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

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