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High-Yield Synthesis of Vertically Aligned Single-Walled Carbon Nanotubes in Ion-Damage and Radical-Damage Free Atmospheric Pressure PECVD

Published online by Cambridge University Press:  01 February 2011

Tomohiro Nozaki
Affiliation:
[email protected], Tokyo Institute of Technology, Mechanical and Control Engineering, 2-12-1 O-okayama, Meguro, Tokyo, 1528552, Japan, +81-3-5734-2179, +81-3-5734-2893
Kuma Ohnishi
Affiliation:
[email protected], Tokyo Institute of Technology, Mechanical and Control Engineering, 2-12-1 O-okayama, Meguro, Tokyo, 1528552, Japan
Ken Okazaki
Affiliation:
[email protected], Tokyo Institute of Technology, Mechanical and Control Engineering, 2-12-1 O-okayama, Meguro, Tokyo, 1528552, Japan
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Abstract

Plasma-enhanced chemical vapor deposition (PECVD) is recognized as one of the viable fabrication techniques of carbon nanotubes (CNTs). However, “CNTs” synthesized in low-pressure PECVD is overwhelmingly carbon nanofibers or multi-walled carbon nanotubes because catalyst and CNTs receive severe damage from ion bombardment: single-walled carbon nanotubes (SWCNTs) has been exclusively synthesized in the thermal CVD regime except few examples. We present atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) for high-purity vertically-aligned SWCNT synthesis, because both ion-damage and radical-damage are preferentially avoided in atmospheric pressure. Tentative reaction mechanism is also discussed based gas phase chemistry analyzed by quadrupole mass spectrometer.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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References

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