Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T01:38:49.849Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Yield Synthesis of Vertically Aligned Single-Walled Carbon Nanotubes in Ion-Damage and Radical-Damage Free Atmospheric Pressure PECVD

Published online by Cambridge University Press:  01 February 2011

Tomohiro Nozaki ,
Kuma Ohnishi  and
Ken Okazaki
Tomohiro Nozaki
Affiliation:
[email protected], Tokyo Institute of Technology, Mechanical and Control Engineering, 2-12-1 O-okayama, Meguro, Tokyo, 1528552, Japan, +81-3-5734-2179, +81-3-5734-2893
Kuma Ohnishi
Affiliation:
[email protected], Tokyo Institute of Technology, Mechanical and Control Engineering, 2-12-1 O-okayama, Meguro, Tokyo, 1528552, Japan
Ken Okazaki
Affiliation:
[email protected], Tokyo Institute of Technology, Mechanical and Control Engineering, 2-12-1 O-okayama, Meguro, Tokyo, 1528552, Japan
Get access

Abstract

Plasma-enhanced chemical vapor deposition (PECVD) is recognized as one of the viable fabrication techniques of carbon nanotubes (CNTs). However, “CNTs” synthesized in low-pressure PECVD is overwhelmingly carbon nanofibers or multi-walled carbon nanotubes because catalyst and CNTs receive severe damage from ion bombardment: single-walled carbon nanotubes (SWCNTs) has been exclusively synthesized in the thermal CVD regime except few examples. We present atmospheric pressure plasma enhanced chemical vapor deposition (AP-PECVD) for high-purity vertically-aligned SWCNT synthesis, because both ion-damage and radical-damage are preferentially avoided in atmospheric pressure. Tentative reaction mechanism is also discussed based gas phase chemistry analyzed by quadrupole mass spectrometer.

Keywords

plasma-enhanced CVD (PECVD) (chemical reaction)plasma depositioncatalytic
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1057: Symposium II – Nanotubes and Related Nanostructures , 2007 , 1057-II14-07
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Melechko, A. V., Merkulov, V. I., McKnight, T. E., Guillorn, M. A., Klein, K. L., Lowndes, D. H. et al. , J. Appl. Phys. 97, 041301/1 (2005).Google Scholar
2. Kato, T., Hatakeyama, R., Tohji, K., Nanotechnology 17, 2223 (2006).Google Scholar
3. Zhong, G., Iwasaki, T., Robertson, J., Kawarada, H., J. Phys. Chem. B Lett. 111, 1907 (2007).Google Scholar
4. Nozaki, T., Ohnishi, K., Okazaki, K., Carbon 45, 364 (2007).Google Scholar
5. Murakami, Y., Miyauchi, Y., Chiashi, S., Maruyama, S., Chem. Phys. Lett. 377, 49 (2003).Google Scholar
6. Okita, A., Suda, Y., Ozeki, A., Sugawara, H., Sakai, Y., Oda, A., Nakamura, J., J. Appl. Phys. 99, 014302–1 (2006).Google Scholar
7. Woo, Y. S., Jeon, D. Y., Han, I. T., Lee, N. S., Jung, J. E., Kim, J. M., Diamond and Related Mat. 11, 59 (2002).Google Scholar