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High-Temperature Thermoelectric Properties of Silicon Boride Ceramics as a Smart Material

Published online by Cambridge University Press:  15 February 2011

Noriyuki Takashima ,
Yasuo Azuma  and
Jun-Ichi Matsushita
Noriyuki Takashima
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka 259-1292, Japan
Yasuo Azuma
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka 259-1292, Japan
Jun-Ichi Matsushita
Affiliation:
Tokai University, 1117 Kitakaname, Hiratsuka 259-1292, Japan
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Abstract

Several silicon boride phases such as SiB4, SiB6, SiB6-x, SiB6+x, and Si11B31, were previously reported. Among them, SiB6has proved to be a potentially useful material because of its excellent electrical conductivity, high degree of hardness, moderate melting point, and low specific gravity. The sintering conditions and thermoelectric properties of silicon boride (SiB6) ceramics produced by hot pressing were investigated in order to determine the suitability of this material for high-temperature thermoelectric applications as a smart material. The relative density increased with increasing sintering temperature. With a sintering temperature of 1923 K, a sintered body having a relative density of more than 99% was obtained. X-ray diffraction analysis showed no crystalline phase other than SiB6 in the sintered body. The specimens were prepared for measurement of the electrical conductivity and Seebeck coefficient by the D.C. four-terminal method. The thermal conductivity of SiB6 was obtained by calculation from the thermal diffusivity and specific heat capacity of the specimen. The electrical conductivity of SiB6 increased with increasing temperature. The electrical conductivity of the polycrystalline SiB6 (99% dense) was 0.5 to 1.1 × 103 S/m at 298 to 1273 K. The thermal conductivity decreased with increasing temperature in the range of room temperature to 1273 K. The thermal conductivity was 9.1 to 2.5 W/mK in the range of room temperature to 1273 K. The Seebeck coefficient of SiB6 increased with increasing temperature. The Seebeck coefficient of SiB6 was 140 × 10−6 V/K at 1273 K. The figure of merit Z of SiB6 increased with increasing temperature. The Z of SiB6 reached 8.1 × 10−6/K at 1273 K. The ZT value is useful to evaluate the ability of thermoelectric materials. The ZT value reached 0.01 at 1273 K. Based on the results, SiB6 showed very good thermoelectric material characteristics at high temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 604: Symposium LL – Materials for Smart Systems III , 1999 , 233
Copyright
Copyright © Materials Research Society 2000

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References

1 Moissan, H. and Stock, A., Comt. Rend, 139, 131 (1900).Google Scholar
2 Wood, C., Emin, D., Feigelson, R. S. and Mackinon, I. D. R., in Symposium Proceedings, Vol. 97, “Novel Refractory Semiconductors”, California, April 1987, edited by Emin, D., Aselage, T. L. and Wood, C. (Materials Research Society, Pittsburgh, PA, 1987) p. 33.Google Scholar
3 Xin, Y., Ford, D., and Sheng, Z. Z., Rev. Sci. Instrum., 63, 4, 2263 (1992).10.1063/1.1143148Google Scholar
4 Heikes, R. R. and Ure, R. W. Jr.., Thermo electricity: Science and Engineering Intersciences, p.285 (1961).Google Scholar
5 Chen, L.. Goto, T. and Hirai, T., Materials Transaction, JIM, 37, 5, 1182 (1996).Google Scholar
6 Koumoto, K., Shimohigoshi, M. and Yanagida, H., J. Mater. Sci., 6, 1453 (1987).Google Scholar