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High-Tc and high-Jc SmFeAs(O,F) films on fluoride substrates grown by molecular beam epitaxy
Published online by Cambridge University Press: 29 August 2012
Abstract
We report on our growth of superconducting SmFeAs(O,F) films by F diffusion. In our process, F-free SmFeAsO films were grown by molecular beam epitaxy (MBE) first, and subsequently F was introduced into the films via F diffusion from an overlayer of SmF3. We performed a detailed comparison of the growth conditions and also the properties of resultant films for fluoride and oxide substrates. The best films on CaF2 exhibited a high transition temperature, Tcon (Tcend) = 57.8 K (56.4 K) at highest, which may exceed the highest Tc ever reported for bulk samples. Furthermore the films on CaF2 also showed high critical current density over 1 MA/cm2 in self-field at 5 K.
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- Copyright © Materials Research Society 2012
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