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High-speed Processing with Reactive Cluster Ion Beams

Published online by Cambridge University Press:  01 February 2011

Toshio Seki  and
Jiro Matsuo
Toshio Seki
Affiliation:
Quantum Science and Engineering Center, Kyoto Univ., Gokasyo, Uji, Kyoto 611–0011, Japan Osaka Science and Technology Center, Utsubo Honmachi Nishi-ku, Osaka 550–0004, Japan
Jiro Matsuo
Affiliation:
Quantum Science and Engineering Center, Kyoto Univ., Gokasyo, Uji, Kyoto 611–0011, Japan
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Abstract

Cluster ion beam processes can produce high rate sputtering with low damage in comparison with monomer ion beam processes. Especially, it is expected that extreme high rate sputtering can be obtained using reactive cluster ion beams. Reactive cluster ion beams, such as SF6, CF4, CHF3, and CH2F2, were generated and their cluster size distributions were measured using Time-of-Flight (TOF) method. Si substrates were irradiated with the reactive cluster ions at the acceleration energy of 5–65 keV. Each sputtering yield was increased with acceleration energy and was about 1000 times higher than that of Ar monomer ions. The sputtering yield of SF6 cluster ions was about 4600 atoms/ion at 65 keV. With this beam, 12 inches wafers can be etched 0.5 μm per minute at 1 mA of beam current. The TOF measurement showed that the size of SF6 cluster was about 550 molecules and the number of fluorine atoms in a SF6 cluster was about 3300. If the sputtered product was SiF, the yield has to be less than 3300 atoms/ion. These results indicate that the reactive cluster ions etch targets not only chemically, but also physically. This high-speed processing with reactive cluster ion beam can be applied to fabricate nano-devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 843: Symposium T – Surface Engineering-Fundamentals and Applications , 2004 , T3.36
Copyright
Copyright © Materials Research Society 2005

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References

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