Hostname: page-component-cd9895bd7-gvvz8 Total loading time: 0 Render date: 2024-12-27T01:37:49.314Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Resolution Spectroscopy of Point Defects in Silicon

Published online by Cambridge University Press:  25 February 2011

H.G. Grimmeiss ,
M. Kleverman  and
J. Olajos
H.G. Grimmeiss
Affiliation:
University of Lund, Dept. of Solid State Physics, Box 118, S-22l 00 Lund, Sweden
M. Kleverman
Affiliation:
University of Lund, Dept. of Solid State Physics, Box 118, S-22l 00 Lund, Sweden
J. Olajos
Affiliation:
University of Lund, Dept. of Solid State Physics, Box 118, S-22l 00 Lund, Sweden
Get access

Abstract

The paper briefly outlines recent developments in high resolution spectroscopy of point defects in silicon. One of the methods, namely photothermal ionization spectroscopy (PTIS) is discussed in detail. Impurities induced by selenium and several transition metals are used as examples m order to illustrate the powerful scope of both transmission and PTIS measurements. These measurements are capable of providing unique information on the electronic properties of point defects, even when the defects exhibit complex excitation spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 3
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 See for example Bube, R.H., Photoconductivity of Solids, John Wiley & Sons, Inc., New York, 1960 Google Scholar
2 See for example Hoogenstraaten, W., Ph.D Thesis, University of Amsterdam (1958)Google Scholar
3 Björklund, G. and Grimmeiss, H.G., Phys. Status Solidi 42, K1 (1970)Google Scholar
4 Sah, C.T., Forbes, L., Rosier, L.L. and Tasch, A.F., Solid State Electron. 13, 759 (1970)Google Scholar
5 Lang, D.V., J. Appl. Phys. 45,3023 (1974)Google Scholar
6 See for example Ludwig, G.W., Phys. Rev. 137, A1520 (1965)Google Scholar
7 Grimmeiss, H.G., Janzén, E., Ennen, H., Schirmer, O., Schneider, J., Wörner, R., Holm, C., Sirtl, E. and Wagner, P., Phys. Rev. B24,4571 (1981)Google Scholar
8 Grimmeiss, H.G., Kleverman, M. and Olajos, J., Mater. Sci. Forum 38–41,341 (1989)Google Scholar
9 Lifshits, T.M., Likhrman, N.P. and Sidorov, V.I., Fiz. Tekh. Poluprov. 2,782 (1968)Google Scholar
10 Kahn, J.M., PhD Thesis, University of California at Berkeley (1986)Google Scholar
11 Queisser, H.J., Festkörperprobleme XI 45 (1971)Google Scholar
12 Kleverman, M., Fornell, J.O., Olajos, J., Grimmeiss, H.G. and Lindström, J.L., Phys. Rev. B37,10199 (1988)Google Scholar
13 Watkins, G.D. and Corbett, J.W., Phys. Rev. 121, 1001 (1961)Google Scholar
14 Corbett, J.W., Watkins, G.D., Chrenko, R.M. and Mc Donald, R.S., Phys. Rev. 121, 1015(1961)Google Scholar
15 Wagner, J., Thonke, K. and Sauer, R., Phys. Rev. B29 7051 (1984)Google Scholar
16 Foy, C.P., J. Phys. C 15,2059 (1982)Google Scholar
17 Thonke, K., Hangleiter, A., Wagner, J. and Saver, R., J. Phys. C 18, L 795 (1985)Google Scholar
18 Janzén, E., Stedman, R., Grossmann, G. and Grimmeiss, H.G., Phys. Rev. 28,1907 (1984)Google Scholar
19 Fornell, J.O. and Grimmeiss, H.G., to be publishedGoogle Scholar
20 Engström, O. and Alm, A., Solid-State Electron. 21, 1571 (1978)Google Scholar
21 Olajos, J., Kleverman, M., Bech Nielsen, B. and Grimmeiss, H.G., Inst. Phys. Conf. Ser. No 95, p. 101(1989)Google Scholar
22 Baber, N., Grimmeiss, H.G., Kleverman, M., Omling, P. and Zafar, N., J. Appl. Phys. 62,2855 (1987)Google Scholar
23 Bergman, K., Grossmann, G., Grimmeiss, H.G. and Stavola, M., Phys. Rev. Lett. 56, 2827(1986)Google Scholar
24 Olajos, J., Bech Nielsen, B., Kleverman, M., Omling, P., Emanuelsson, P. and Grimmeiss, H.G., Appl. Phys. Lettl 53,2507(1988)Google Scholar
25 Bever, T., Emanuelsson, P., Kleverman, M. and Grimmeiss, H.G., J. Appl. Phys. (?)Google Scholar
26 Ludwig, G.W. and Woodbury, H.H., Solid State Phys. 13,223 (1962)Google Scholar
27 Czaputa, R., Feichtinger, H. and Oswald, J., Solid State Commun. 47, 223 (1983)Google Scholar
28 Kimerling, L.C., Benton, J.L. and Rubin, J.J. in: Defects and Radiation Effects in Semiconductors 1980, Inst. of Physics Conf. Ser. 59,217 (1981)Google Scholar
29 Wagner, J. and Sauer, R., Phys. Rev. B26,6,3502Google Scholar
30 Kleverman, M., Olajos, J. and Grimmeiss, H.G., Phys. Rev. B37,2613 (1988) and references therein.Google Scholar
31 Olajos, J., Kleverman, M. and Grimmeiss, H.G., Phys. Rev. B40,6196 (1989)Google Scholar
32 Pugnet, M., Barbolla, J., Brabant, J.C., Saint-Yves, F. and Brousseau, M., Physica Status Solidi A 35,533 (1976)Google Scholar