Hostname: page-component-586b7cd67f-rdxmf Total loading time: 0 Render date: 2024-11-23T18:20:05.048Z Has data issue: false hasContentIssue false

High-resolution Raman imaging by optically tweezing a dielectric microsphere

Published online by Cambridge University Press:  01 February 2011

Johnson Kasim
Affiliation:
[email protected], Nanyang Technological University, Physics and Applied Physics, 1 Nanyang Walk, Blk 5 Level 3, Singapore, Singapore, 637616, Singapore
T. Yu
Affiliation:
[email protected], Nanyang Technological University, Physics and Applied Physics, 1 Nanyang Walk, Blk 5 Level 3, Singapore, 637616, Singapore
Y. M. You
Affiliation:
[email protected], Nanyang Technological University, Physics and Applied Physics, 1 Nanyang Walk, Blk 5 Level 3, Singapore, 637616, Singapore
J. P. Liu
Affiliation:
[email protected], Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore, 738406, Singapore
A. K. H. See
Affiliation:
[email protected], Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore, 738406, Singapore
Z. X. Shen
Affiliation:
[email protected], Nanyang Technological University, Physics and Applied Physics, 1 Nanyang Walk, Blk 5 Level 3, Singapore, 637616, Singapore
Get access

Abstract

We show a different method in doing near-field Raman imaging with sub-diffraction limit spatial resolution. A dielectric microsphere (for example polystyrene microsphere) is trapped by optical tweezers. The microsphere is used to focus the laser to the sample, and also to collect the scattered Raman signals. We show the capability of this method in imaging various types of samples, such as SiGe/Si structures, gold nanopattern and carbon nanotubes. This method is comparatively easier to perform, better repeatability, and stronger signal than the normal near-field Raman techniques.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tsai, D. P., Othonos, A., Moskovits, M., and Uttamchandani, D., Appl. Phys. Lett. 64, 17681770 (1994).Google Scholar
2. Grausem, J., Humbert, B., Spajer, M., Courjon, D., Burneau, A., and Oswalt, J., J. Raman Specstrosc. 30, 833840 (1999).Google Scholar
3. Hecht, B., Sick, B., Wild, U. P., Deckert, V., Zenobi, R., Martin, O. J. F., and Pohl, D. W., J. Chem. Phys. 112, 77617774 (2000).Google Scholar
4. Sun, W. X. and Shen, Z. X., J. Raman Spectrosc. 34, 668676 (2003).Google Scholar
5. Anderson, N., Hartschuh, A., and Novotny, L., Materials Today, May, 5054 (2005).Google Scholar
6. Saito, Y., Motohashi, M., Hayazawa, N., Iyoki, M., and Kawata, S., Appl. Phys. Lett. 88, 143109 (2006).Google Scholar
7. Ashkin, A., Science 210, 10811088 (1980).Google Scholar
8. Li, X., Chen, Z. G., Taflove, A., and Backman, V., Opt. Express 13, 526533 (2005).Google Scholar
9. Yi, K. J., wang, H., Lu, Y. F., and Yang, Z. Y., J. Appl. Phys. 101, 063528 (2007).Google Scholar