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High-resolution Photoinduced Transient Spectroscopy of Defect Centers in Undoped Semi-Insulating 6H-SiC

Published online by Cambridge University Press:  01 February 2011

Pawel Kaminski ,
Roman Kozlowski ,
Marcin Miczuga ,
Michal Pawlowski ,
Michal Kozubal  and
Jaroslaw Zelazko
Pawel Kaminski
Affiliation:
[email protected], Institute of Electronic Materials Technology, Epitaxy Department, ul. Wólczyñska 133, Warszawa, 01-919, Poland, 48 609058857, 48 22 8349003
Roman Kozlowski
Affiliation:
[email protected], Institute of Electronic Materials Technology, ul. Wólczyñska 133, Warszawa, 01-919, Poland
Marcin Miczuga
Affiliation:
[email protected], Military University of Technology, ul. Kaliskiego 2, Warszawa, 00-908, Poland
Michal Pawlowski
Affiliation:
[email protected], Institute of Electronic Materials Technology, ul. Wólczyñska 133, Warszawa, 01-919, Poland
Michal Kozubal
Affiliation:
[email protected], Institute of Electronic Materials Technology, ul. Wólczyñska 133, Warszawa, 01-919, Poland
Jaroslaw Zelazko
Affiliation:
[email protected], Institute of Electronic Materials Technology, ul. Wólczyñska 133, Warszawa, 01-919, Poland
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Abstract

High-resolution photoinduced transient spectroscopy (HRPITS) has been applied to studying defect centers controlling the charge compensation in semi-insulating (SI), vanadium-free, bulk 6H- SiC. The photocurrent relaxation waveforms were digitally recorded in the temperature range of 50 − 750 K and a new approach to extract the parameters of defect centers from the temperature-induced changes in the time constants of the waveforms has been implemented. It is based on a two-dimensional analysis using the numerical inversion of the Laplace transform. As a result, the images of spectral fringes depicting the temperature dependences of the emission rate of charge carriers for defect centers are created. Using the new procedure for the analysis of the photocurrent relaxation waveforms and the new way of the visualization of the thermal emission rate dependences, a number of shallow and deep defect levels ranging from 80 to 1900 meV have been detected. The obtained results indicate that defect structure of undoped SI bulk 6H-SiC is very complex and the material properties are affected by various point defects occupying the hexagonal and quasi-cubic lattice sites.

Keywords

photoconductivityelectronic materialdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D02-01
Copyright
Copyright © Materials Research Society 2008

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