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High-Resolution Core Level Study of the Co/Si(111) Interface

Published online by Cambridge University Press:  25 February 2011

F. Boscherini ,
J. J. Joyce ,
M. W. Ruckman  and
J. H. Weaver
F. Boscherini
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
J. J. Joyce
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
M. W. Ruckman
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
J. H. Weaver
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN 55455
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Abstract

There has recently been considerable interest in the reaction between Co and a clean Si surface. This interest stems from the epitaxy of CoSi2 and NiSi2 on Si and its potential for the construction of reliable and stable metal-semiconductor structures. In fact, the fabrication of a Si/CoSi2/Si transistor has been recently reported.[l] On a more fundamental side, it has been possible to address the problem of the relation between Schottky barrier height and structure at the NiSi2/Ni interface, which exhibits both a rotated (B-type) and unrotated (A-type) geometry.[2] For CoSi2/Si only the 180° rotated, B-type disilicide is formed. By studying the room temperature interface, we have attempted to describe the nature and physical extent of reaction products; such knowledge is important to understand the formation of interface silicides which ultimately control the nature of the high temperature epitaxial interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 83: Symposium J – Physical and Chemical Properties of Thin Metal Overlayers and Alloy Surfaces , 1986 , 239
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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