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A High-Resolution Angle-Resolved Photoemission Study of the Temperature Dependent Electronic Structure of the Pentatelluride ZrTe5

Published online by Cambridge University Press:  10 February 2011

D. N. McIlroy
Affiliation:
Department of Physics, University of Idaho, Moscow, ID 83844-0903
Daqing Zhang
Affiliation:
Department of Physics, University of Idaho, Moscow, ID 83844-0903
Bradley Kempton
Affiliation:
Department of Physics, University of Idaho, Moscow, ID 83844-0903
J. Wharton
Affiliation:
Department of Physics, University of Idaho, Moscow, ID 83844-0903
R. T. Littleton
Affiliation:
Department of Physics, Clemson University, Clemson, SC 29634-1911
T. M. Tritt
Affiliation:
Department of Physics, Clemson University, Clemson, SC 29634-1911
C. G. Olson
Affiliation:
Ames Laboratory, Iowa State University, Ames, IA 50011
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Abstract

The temperature dependent band structure of the pentatelluride ZrTe5 has been examined using the technique of high-resolution angle-resolved photoemission in conjunction with synchrotron radiation. Specifically, the band dispersion along the X-Γ-X high symmetry axis was mapped at 20K (T<Tc) and 170K (T>Tc), where Tc≃160K. One electron band and two hole bands within 0.5eV of the Fermi level have been identified. The dispersion of the bands indicates that they have extremely small electron and hole effective masses. The hole bands were observed to distort and shift in energy upon raising the sample temperature above Tc, indicative of a surface distortion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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