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High-Rate Rpecvd of a-Si:H Films by Means of a VHF Resonant Plasma Source

Published online by Cambridge University Press:  10 February 2011

T. Blum ,
G. Suchaneck ,
J. Kuske ,
U. Stephan ,
W. Beyer  and
A. Kottwitz
T. Blum
Affiliation:
Dresden University of Technology, LHM, 01062 Dresden, Germany
G. Suchaneck
Affiliation:
Dresden University of Technology, LHM, 01062 Dresden, Germany
J. Kuske
Affiliation:
Dresden University of Technology, LHM, 01062 Dresden, Germany
U. Stephan
Affiliation:
Dresden University of Technology, LHM, 01062 Dresden, Germany
W. Beyer
Affiliation:
Forschungszentpjm Jülich GmbH, ISI-PV, 52428 Jülich, Germany
A. Kottwitz
Affiliation:
Dresden University of Technology, LHM, 01062 Dresden, Germany
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Abstract

High deposition rate (up to 5 nm/s) a-Si:H films suitable for recrystallization were deposited using a λ/4 helical resonator source. Refractive index, Tauc-gap, photo- and dark conductivities were measured for film characterization. The metastable behaviour was characterized by the light- induced degradation of the photoconductivity. Hydrogen content and bonding configuration were analyzed by IR absorption and mass separated thermal effusion transients, film microstructure was studied by intentionally incorporating carbon and oxygen. Most of the hydrogen is located on internal surfaces in the otherwise dense material. Differences between the deposition from our highly excited plasma and the conventional remote PECVD process are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 369
Copyright
Copyright © Materials Research Society 1996

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