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High-Rate Etching of Mn-Zn Ferrite by Laser-Induced Chemical Reaction in CC12F2 Atmosphere

Published online by Cambridge University Press:  26 February 2011

Y. F. Lu ,
M. Takai ,
S. Nagatomo  and
S. Namba
Y. F. Lu
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
M. Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
S. Nagatomo
Affiliation:
On leave from D. S. Scanner Co., Ltd., Fukushima 5–3–7, Fukushima-ku, Osaka 553, Japan
S. Namba
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Maskless dry etching of Mn-Zn ferrite in dich1orodif1uoromethane (CC12F2) by Ar+-ion laser (514.5 nm-line) irradiation has been investigated to obtain high etching rates and aspect-ratios of etched grooves. The etching reaction was found to be thermochemical and caused by Cl radicals thermally decomposed from CCl2F2 gas. High etching rates of up to 360 μm/s, which is about one order of magnitude higher than that in a CCl4 gas and even higher than that in a H3PO4 solution, have been achieved. A high aspect-ratio of up to 12 was obtained. Definite gas pressure and dwell time are necessary to fabricate a smooth groove.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 201: Symposium A – Surface Chemistry and Beam-Solid Interactions , 1990 , 123
Copyright
Copyright © Materials Research Society 1991

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