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High-rate deposition of a-SiNx:H films for photovoltaic applications

Published online by Cambridge University Press:  17 March 2011

W.M.M. Kessels ,
F.J.H. van Assche ,
J. Hong ,
J.D. Moschner ,
T. Lauinger ,
D.C. Schram  and
M.C.M. van de Sanden
W.M.M. Kessels
Affiliation:
Dept. op Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
F.J.H. van Assche
Affiliation:
Dept. op Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J. Hong
Affiliation:
Dept. op Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
J.D. Moschner
Affiliation:
Institut für Solarenergieforschung Hameln-Emmerthal (ISFH), Am Ohrberg 1, D-31860, Emmerthal, Germany
T. Lauinger
Affiliation:
Institut für Solarenergieforschung Hameln-Emmerthal (ISFH), Am Ohrberg 1, D-31860, Emmerthal, Germany
D.C. Schram
Affiliation:
Dept. op Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
M.C.M. van de Sanden
Affiliation:
Dept. op Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

The feasibility of the new ‘Expanding Thermal Plasma’ technique for the deposition of a-SiNx:H at high deposition rates (typically ∼20Å/s) has been investigated. The structural film properties of the a-SiNx:H are reported for various process conditions and the application of the material as antireflection coating on (multi)crystalline silicon solar cells is studied. Furthermore, the performance of the material for surface and bulk passivation is investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A8.6
Copyright
Copyright © Materials Research Society 2001

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References

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