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High-Quality InGaAsP Crystals Grown by MOVPE Using TBA and TBP

Published online by Cambridge University Press:  25 February 2011

A. Kuramata ,
S. Yasmazaki  and
K. Nakajima
A. Kuramata
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
S. Yasmazaki
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
K. Nakajima
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
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Abstract

TBA and TBP are attractive candidates for group V sources for MOVPE growth from the viewpoint of safety. We studied how the composition of InGaAsP crystals depends on growth conditions, and investigated its electrical and optical properties. The relationship between group V sources and crystals indicates that TBA and TBP decompose into AsH and PH. Since there is no carbon in AsH and PH, carbon contamination in the crystals is expected to be small. Carrier concentrations ranged from 5×1014 cm−3 to 1.5×1015 cm−3. Photoluminescence spectra at 4.2K showed strong band-edge emission with no acceptor-related emission. Based on the electrical and optical properties of the crystals, we conclude that high-quality InGaAsP crystals can be grown using TBA and TBP.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 365
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Haacke, G., Watkins, S. P., and burkhard, H., Appl. Phys. Lett. 56, 478 (1990).CrossRefGoogle Scholar
2. Kikkawa, T., Tanaka, H., and Komeno, J., J. Appl. Phys. 67, 3576 (1990).CrossRefGoogle Scholar
3. Michel, C., Viscogliosi, M., Baumann, J., Watkins, S., Bunz, L., and Schachter, R., in OMVPE Workshop, Monterey, California, 1989.Google Scholar
4. Kuramata, A., Yamazaki, S., and Nakajima, K., Ninth symposium Record of Alloy Semiconductor Physics and Electronics, Izunagaoka, 1990, pp. 49.Google Scholar
5. Duncan, W. J., Baker, D. M., Harlow, M., English, A., Burness, A. L., and Haigh, J., Electron. Lett. 25, 1603 (1989)CrossRefGoogle Scholar
6. Kuramata, A., Yamazaki, S., and Nakajima, K., Inst. Phys. Conf. Ser. 96 (Inst. Phys., London, 1989) pp. 113.Google Scholar
7. Shaw, D. W., J. Phys. Chem. Solids 36, 118 (1975).Google Scholar
8. Koukitu, A. and Seki, H., J. Crystal Growth 49, 325 (1980).Google Scholar
9. Bans, V. S. and Etternberg, M., J. Phys. Chem. Solids 34, 1119 (1973).Google Scholar
10. Tirtowidjojo, M. and Pollard, R., J. Crystal Growth 77, 200 (1986).Google Scholar
11. in JANAF Thernodynamical Tables, edited by Chase, et al. (Nat. Bur. Standard, 1985).Google Scholar
12. Nakajima, K., in Semiconductors and Semimetals 22, edited by Tsang, W. T. (Academic Press, Inc., Orlando, 1985) pp 1.Google Scholar