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High-power Organic Field-effect Transistors Using a Three-dimensional Structure

Published online by Cambridge University Press:  01 February 2011

M. Uno
Affiliation:
[email protected], TRI-Osaka, Information & Electronics, Izumi, Japan
Yuri Hirose
Affiliation:
[email protected], Osaka University, Graduate School of Science, Toyonaka, Osaka, Japan
Kengo Nakayama
Affiliation:
[email protected], Osaka University, Graduate School of Science, 1-1 Machikaneyama, Toyonaka, 560-0043, Japan
Takafumi Uemura
Affiliation:
[email protected], Osaka University, Department of Chemistry, @Graduate School of Science, 1-1 Machikaneyama, Toyonaka, 560-0043, Japan, +81-6-6879-4169
Yasuhiro Nakazawa
Affiliation:
[email protected], Osaka University, Graduate School of Science, Toyonaka, Osaka, Japan
K. Takimiya
Affiliation:
[email protected], Hiroshima University, Graduate School of Applied Chemistry, Higashi-hiroshima, Japan
Jun Takeya
Affiliation:
[email protected], Osaka University, Dept. of Chemistry, Grad. School of Science, 1-1 Machikaneyama, Toyonaka, 560-0043, Japan, +81-6-6850-5398, +81-6-6850-6797
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Abstract

Three-dimensional organic field-effect transistors with multiple sub-micrometer channels are developed to exhibit high current density and high switching speed. The sub-micrometer channels are arranged perpendicularly to substrates and are defined by the height of a multi-columnar structure fabricated without using electron-beam-lithography technique. For devices with dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, extremely high current density exceeding 10 A/cm2 and fast switching within 200 ns are realized with an on-off ratio of 105. The unprecedented performance is beyond general requirements to control organic light-emitting diodes, so that even more extensive applications to higher-speed active-matrices and display-driving circuits can be realized with organic semiconductors.

Type
Research Article
Copyright
Copyright © Materials Research Society 2010

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References

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