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High-Performance InAs/GaAs Quantum Dots Infrared Photodetector With/Without Al0.2Ga0.8As Blocking Layers

Published online by Cambridge University Press:  21 March 2011

Zhengmao Ye ,
Joe C. Campbell ,
Zhonghui Chen ,
O. Baklenov ,
E. T. Kim ,
I. Mukhametzhanov ,
J. Tie  and
A. Madhukar
Zhengmao Ye
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10,100 Burnet Rd., Bldg. 160, Austin, TX 78758, U.S.A.
Joe C. Campbell
Affiliation:
Microelectronics Research Center, The University of Texas at Austin, 10,100 Burnet Rd., Bldg. 160, Austin, TX 78758, U.S.A.
Zhonghui Chen
Affiliation:
Departments of Materials Science and Physics University of Southern California, Los Angeles, CA 90089-0241, U.S.A.
O. Baklenov
Affiliation:
Departments of Materials Science and Physics University of Southern California, Los Angeles, CA 90089-0241, U.S.A.
E. T. Kim
Affiliation:
Departments of Materials Science and Physics University of Southern California, Los Angeles, CA 90089-0241, U.S.A.
I. Mukhametzhanov
Affiliation:
Departments of Materials Science and Physics University of Southern California, Los Angeles, CA 90089-0241, U.S.A.
J. Tie
Affiliation:
Departments of Materials Science and Physics University of Southern California, Los Angeles, CA 90089-0241, U.S.A.
A. Madhukar
Affiliation:
Departments of Materials Science and Physics University of Southern California, Los Angeles, CA 90089-0241, U.S.A.
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Abstract

InAs/AlGaAs quantum dot infrared photodetectors based on bound-to-bound intraband transitions in undoped InAs quantum dots are reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and –0.7 V bias the responsivity was 14 mA/W and the detectivtiy, D*, was 1010 cmHz1/2/W.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.17.1
Copyright
Copyright © Materials Research Society 2002

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