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Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition

Published online by Cambridge University Press:  21 March 2011

Fengyan Zhang ,
Sheng Teng Hsu ,
Jer-shen Maa ,
Yoshi Ono ,
Ying Hong ,
Weiwei Zhuang ,
Shigeo Ohnishi ,
Wendong Zhen  and
Norito Fujiwara
Fengyan Zhang
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd. Camas, WA 98607, USA
Sheng Teng Hsu
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd. Camas, WA 98607, USA
Jer-shen Maa
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd. Camas, WA 98607, USA
Yoshi Ono
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd. Camas, WA 98607, USA
Ying Hong
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd. Camas, WA 98607, USA
Weiwei Zhuang
Affiliation:
Sharp Laboratories of America, Inc., 5700 NW Pacific Rim Blvd. Camas, WA 98607, USA
Shigeo Ohnishi
Affiliation:
Sharp Corporation, Tenri-city, Nara632-8567, Japan
Wendong Zhen
Affiliation:
Sharp Corporation, Tenri-city, Nara632-8567, Japan
Norito Fujiwara
Affiliation:
Sharp Corporation, Tenri-city, Nara632-8567, Japan
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Abstract

Ir-Ta-O composite bottom electrode has extraordinary high temperature stability. It can maintain good conductivity and integrity even after 5min annealing at 1000 °C in oxygen ambient. The thermal stability of Ir-Ta-O on different substrates has been studied. It shows that Ir-Ta-O is also very stable on Si and SiO2 substrates. No hillock formation and peelings of the bottom electrode were observed after high temperature and long time annealing in O2 ambient. SEM, TEM, XRD, and AES have been used to characterize the Ir-Ta-O film and the interfaces between Ir-Ta-O bottom electrode and Si or SiO2 substrate. The composition and conductivity changes of the electrode during oxygen ambient annealing and the interdiffusion issue will be discussed. Furthermore, Ir-Ta-O/SiO2/Si capacitor with 30Å gate oxide was fabricated and the C-V and I-V characteristics were measured to confirm the stability of Ir-Ta-O on thin gate oxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 655 , 2000 , CC2.3.1
Copyright
Copyright © Materials Research Society 2001

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