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Highly Reliable Thin Hafnium Oxide Gate Dielectric

Published online by Cambridge University Press:  10 February 2011

Laegu Kang ,
Byoung-Hun Lee ,
Wen-Jie Qi ,
Yong-Joo Jeon ,
Renee Nieh ,
Sundar Gopalan ,
Katsunori Onishi  and
Jack C. Lee
Laegu Kang
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, [email protected]
Byoung-Hun Lee
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, [email protected]
Wen-Jie Qi
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, [email protected]
Yong-Joo Jeon
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, [email protected]
Renee Nieh
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, [email protected]
Sundar Gopalan
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, [email protected]
Katsunori Onishi
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, [email protected]
Jack C. Lee
Affiliation:
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, [email protected]
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Abstract

HfO2 is the one of the potential high-k dielectrics for replacing SiO2 as a gate dielectric. HfO2 is thermodynamically stable when in direct contact with Si and has a reasonable band gap (∼5.65eV). In this study, MOS capacitors (Pt/HfO2/Si) were fabricated by depositing HfO2 using reactive DC magnetron sputtering in the range of 33∼135Å followed by Pt deposition. During the HfO2 deposition, O2 flow was modulated to control interface quality and to suppress interfacial layer growing. By optimizing the HfO2 deposition process, equivalent oxide thickness (EOT) can be reduced down to ∼11.2 Å with the leakage current as low as 1X10−2 A/cm2 at +1.0V and negligible frequency dispersion. HfO2 films also show excellent breakdown characteristics and negligible hysteresis after high temperature annealing. From the high resolution TEM, there is a thin interfacial layer after annealing, suggesting a composite of Si-Hf-O with a dielectric constant of ≈ 2 X K SiO2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 81
Copyright
Copyright © Materials Research Society 2000

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References

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