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Highly Reliable Metal Gate nMOSFETs by Improved CVD-WSix films with Work Function of 4.3eV

Published online by Cambridge University Press:  28 July 2011

Kazuaki Nakajima ,
Hiroshi Nakazawa ,
Katsuyuki Sekine ,
Kouji Matsuo ,
Tomohiro Saito ,
Tomio Katata ,
Kyoichi Suguro  and
Yoshitaka Tsunashima
Kazuaki Nakajima
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577 e-mail: [email protected]
Hiroshi Nakazawa
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Katsuyuki Sekine
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Kouji Matsuo
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Tomohiro Saito
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Tomio Katata
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Kyoichi Suguro
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
Yoshitaka Tsunashima
Affiliation:
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522,JapanPhone/Fax: +81-45-770-3662/3577
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Abstract

In this paper, we first propose an improved CVD-WSix metal gate suitable for use with nMOSFETs. Work function of CVD-WSi3.9 gate estimated from C-V measurements was 4.3eV. The nMOSFET using CVD-WSi3.9 gate electrode showed that Vth variation of L/W=1 μm/10μm nMOSFETs can be suppressed to be lower than 8mV in 22chip. In CVD-WSi3.9 gate MOSFETs with gate length of 50nm, a drive current of 636μA/μm was achieved for off-state leakage current of 35nA/μm at 1.0V of power supply voltage. By using CVD-WSi3.9 gate electrode, highly reliable metal gate nMOSFETs can be realized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , D4.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Nakajima, K., Akasaka, Y., Kaneko, M., Tamaoki, M., Yamada, Y., Shimizu, T., Ozawa, Y. and Suguro, K., 1999 Symp. on VLSI Tech., p.95 Google Scholar
2. Saito, T., Sekine, K., Matsuo, K., Nakajima, K., Suguro, K. and Tsunashima, Y., Jpn. J. Appl. Phys., 42, pp.L1130–1132 (2003)Google Scholar
3. Matsuo, K., Arisumi, O. and Suguro, K., Ext. Abs. on SSDM, p.732–733 (2003)Google Scholar
3. Samavedam, S. B. La, L. B., Smith, J., Dakshina-Murthy, S., Luckowski, E., Shaeffer, J., Zavala, M., Martin, R., Dhandapani, V., Triyoso, D., Tseng, H. H., Tobin, P. J., Glimer, D. C., Hobbs, C., Tayloe, W. J., Grant, J. M., Hegde, R. I., Mogab, J., Thomas, C., Abramowitz, P., Moosa, M., Conner, J., Jiang, J., Arunachalam, V., Sadd, M., Nguyen, B-Y. and White, B., IEDM Tech. Digest 2002, pp.433–436 Google Scholar
4. Lee, J. H., Zhong, H., Suh, Y-S., Heuss, G., Gurganus, J., Chen, B. and Misra, V, IEDM Tech. Digest 2002, p.359–362 Google Scholar
5. Kedzierski, J., Boyd, D., Ronsheim, P., Zafar, S., Newbury, J., Ott, J., Cabral, C. Jr., Ieong, M., Haensch, W., IEDM Tech. Digest 2003, p315–318 Google Scholar
6. Ghidini, G., Clementi, C., Drera, D. and Maugain, F., Microelectron. Reliab., 38, pp.255–258 (1998)Google Scholar