Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-04T21:09:59.536Z Has data issue: false hasContentIssue false
  • English
  • Français

Highly conductive and transparent Ti-doped zinc oxide thin films

Published online by Cambridge University Press:  15 February 2011

Yang-Ming Lu ,
Shu-I Tsai  and
Chen-Min Chang
Yang-Ming Lu
Affiliation:
Department of Electronics Engineering, Kun Shan University of Technology, Tainan, Taiwan,No.949, Da-Wan Rd., Yung-Kang City, Tainan Hsien,71003 Taiwan, R.O.C. TEL:886-6-2050208,886-6-911653688; FAX:886-6-2731863 Email:[email protected]
Shu-I Tsai
Affiliation:
Department of Electronics Engineering, Kun Shan University of Technology, Tainan, Taiwan,No.949, Da-Wan Rd., Yung-Kang City, Tainan Hsien,71003 Taiwan, R.O.C. TEL:886-6-2050208,886-6-911653688; FAX:886-6-2731863 Email:[email protected]
Chen-Min Chang
Affiliation:
Department of Electronics Engineering, Kun Shan University of Technology, Tainan, Taiwan,No.949, Da-Wan Rd., Yung-Kang City, Tainan Hsien,71003 Taiwan, R.O.C. TEL:886-6-2050208,886-6-911653688; FAX:886-6-2731863 Email:[email protected]
Get access

Abstract

The properties of ZnO thin film are currently of great commercial and scientific interest due to its particular properties such as highly conductive, transparent as well as chemical stability and nontoxic. The Ti doping ZnO thin films were deposited by simultaneously magnetron co-sputtering from both Zn and Ti targets in a mixture of oxygen and argon gases onto heated Corning 7059 glass substrates in this study. The experimental results show that deposition rate of ZnO films are strongly dependent on DC power of Ti target. The growth rate initially increases and changes to decrease when the DC power of Ti target further rises. The content of Ti in the ZnO films increases with the applied DC power of Ti target. The lattice constant of ZnO (002) increases with DC power of Ti target due to incorporated Ti into the lattice of ZnO. The crystalline size becomes smaller when the DC power of Ti target was raised. The visible transmittance is a little lowered when slight Ti incorporated but still average maintains above 80%. The lowest resistivity of undoped ZnO film obtained in this study is 4.14×10-3 ohm-cm and further decreased to 1.02×10-3 ohm-cm after being doped a trace of Ti.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H10.11
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Kammler, D.R., Edwards, D.D., Ingram, B.J., Mason, T.O., Palmer, G.B., Ambrosini, A., Poeppelmeier, K.R., Proc.Electrochem.Soc., 99, 68 (1999)Google Scholar
2. Hamberg, I., Granqvist, C.G., J.Appl.Phys., 60, R123 (1986)Google Scholar
3. Minami, T., Mater.Res.Bull., 25, 38 (2000)Google Scholar
4. Wang, A., Edleman, N.L., Babcock, J.R., Marks, T.J., Lane, M.A., Brazis, P.W., Kannewurf, C.R., Mater.Res.Soc.Symp.Proc., 607, 345 (2000)Google Scholar
5. Freeman, A.J., Poeppelmeier, K.R., Mason, T.D., Chang, R.P.H., Marks, T.J., MRS Bull., 25, 45 (2000)Google Scholar
6. Keis, K., Magnusson, E., Lindstrom, H., Lindquist, S.E., Hagfeldt, A., Sol.Energy, 73, 51 (2002)Google Scholar
7. Reddy, K.T. Ramakrishna, Miles, R.W., J.Mater.Sci.Lett., 17, 279 (1998)Google Scholar
8. Chen, M., Pei, Z.L., Wang, X., Sun, C., Wang, L.S., J.Vac.Sci.Technol.A, 19, 963 (2001)Google Scholar
9. Haga, K., Kamidaira, M., Kashiwaba, Y., Sekiguchi, T., Watabable, H., J.Cryst.Growth, 214, 77 (2000)Google Scholar
10. Vigil, O., Cruz, F., Santana, G., Vaillant, L., Morales-Acevedo, A., Contreras-Puente, G., Appl.Surf.Sci., 161, 27 (2000)Google Scholar
11. Jin, B.J., Woo, H.S., Im, S., Bae, S.H., Lee, S.Y.., Appl.Surf.Sci., 169/170, 521 (2001)Google Scholar