Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T15:17:56.424Z Has data issue: false hasContentIssue false
  • English
  • Français

High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

Published online by Cambridge University Press:  25 May 2012

Ryan M. France  and
Myles A. Steiner
Ryan M. France
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Myles A. Steiner
Affiliation:
National Renewable Energy Laboratory, Golden, Colorado 80401
Get access

Abstract

Initial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1432: Symposium G – “Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II” , 2012 , mrss12-1432-g05-03-ii06-03
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Geisz, J.F., Kurtz, S.R., Wanlass, M.W., Ward, J.S., Duda, A., Friedman, D. J., Olson, J. M., McMahon, W. E., Moriarty, T., and Kiehl, J., Appl. Phys. Lett. 91, 023502 (2007).Google Scholar
2. Geisz, J.F., Friedman, D.J., Ward, J.S., Duda, A., Olavarria, W.J., Moriarty, T.E., Kiehl, J.T., Romero, M.J., Norman, A.G., and Jones, K.M., Appl. Phys. Lett. 93, 123505 (2008).Google Scholar
3. Geisz, J.F., Duda, A., France, R.M., Friedman, D.J., Garcia, I., Olavarria, W.J., Olson, J.M., Steiner, M.A., Ward, J.S., and Young, M., Proceedings of the 8th International Conference on Concentrating Photovoltaic Systems, Toledo, Spain, 2012.Google Scholar
4. France, R.M., Geisz, J.F., Steiner, M.A., To, B., Romero, M. J., Olavarria, W.J., and King, R. R., J. Appl. Phys. (accepted).Google Scholar
5. Rey-Stolle, I. and Algora, C., Prog. Photovolt. 11, 249 (2003).Google Scholar
6. Geisz, J.F., Levandor, A.X., Norman, A. G., Jones, K.M., and Romero, M. J., J. Crystal Growth 310, 2339 (2008).Google Scholar
7. France, R. and Ptak, A., J. Vac. Sci. Technol. B 29, 03C115 (2011).Google Scholar
8. Ueda, O., Reliability and Degradation of III-V Optical Devices. (Artech House Publishers, 1996).Google Scholar