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High-Frequency Field Effects on Ionic Defect Concentrations and Solid-State Diffusion Processes
Published online by Cambridge University Press: 10 February 2011
Abstract
We describe computer simulations of a microwave-induced driving force for ionic transport. The simulations are based on a model which predicts rectification of ionic fluxes at interfaces and a resulting depletion or accumulation of defects near the interface. Some details of the model are discussed, results of the simulations are presented, and the impact of these effects on sintering and diffusion is discussed.
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- Research Article
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- Copyright © Materials Research Society 1996
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