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High-frequency electron paramagnetic resonance study of the as deposited and annealed carbon-rich hydrogenated amorphous silicon-carbon films

Published online by Cambridge University Press:  01 February 2011

A. V. Vasin ,
E. N. Kalabukhova ,
S. N. Lukin ,
D. V. Savchenko ,
V. S. Lysenko ,
A. N. Nazarov ,
A. V. Rusavsky  and
Y. Koshka
A. V. Vasin
Affiliation:
[email protected], V. E. Lashkaryov Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev, 03028, Ukraine
E. N. Kalabukhova
Affiliation:
[email protected], V. E. Lashkaryov Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev, 03028, Ukraine
S. N. Lukin
Affiliation:
[email protected], V. E. Lashkaryov Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev, 03028, Ukraine
D. V. Savchenko
Affiliation:
[email protected], V. E. Lashkaryov Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev, 03028, Ukraine
V. S. Lysenko
Affiliation:
[email protected], V. E. Lashkaryov Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev, 03028, Ukraine
A. N. Nazarov
Affiliation:
[email protected], V. E. Lashkaryov Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev, 03028, Ukraine
A. V. Rusavsky
Affiliation:
[email protected], V. E. Lashkaryov Institute of Semiconductor Physics, NASU, Pr. Nauki 45, Kiev, 03028, Ukraine
Y. Koshka
Affiliation:
[email protected], Mississippi State University, 216 Simrall Hall, Box 9571, Mississippi State, MS, 39762, United States
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Abstract

Three paramagnetic defects were revealed in amorphous hydrogenated carbon-rich silicon-carbon alloy films (a-SiC:H), which were attributed to the to silicon (Si) dangling bonds (Si DB), carbon-related defects (CRD), and bulk Si DB defect bonded with nitrogen atoms Si-N2Si. The effect of thermal annealing on a-SiC:H films was studied. It was established that annealing at high temperatures leads to formation of graphite-like carbon clusters in a-SiC:H films and strong increase of the concentration of CRD, while EPR signal from Si DB disappeared. A dependence of the resonance positions for both Si DB and CRD signals on the orientation of the magnetic field relative to the a-SiC:H film plane was found at Q-band and D-band frequencies and was explained by the influence of demagnetizing fields, which is becoming significant at high spin density of the paramagnetic centers, higher microwave frequency, and low temperature. A demagnetizing field of 11 Gs was found in annealed a-SiC:H film at 140 GHz and 4.2 K.

Keywords

amorphouselectron spin resonancedefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1069: Symposium D – Silicon Carbide 2008—Materials, Processing and Devices , 2008 , 1069-D07-11
Copyright
Copyright © Materials Research Society 2008

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References

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