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High-Energy Ion-Implantation of a Moderately Deep Acceptor Hg Into Liquid Encapsulated Czochralski Grown GaAs : Formation of New Shallow Emission Bands

Published online by Cambridge University Press:  21 February 2011

K. Harada ,
Y. Makita ,
H. Shibata ,
B. Lo ,
A. C. Beye ,
M. P. Halsalic ,
S. Kimura ,
N. Kobayashi ,
T. Iida  and
T. Shima
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K. Harada
Affiliation:
Tokai University, Hiratsuka, Kanagawa, 259-12, Japan.
Y. Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan.
H. Shibata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan.
B. Lo
Affiliation:
Cheikh Anta Diop University, Dakar / Senegal.
A. C. Beye
Affiliation:
Cheikh Anta Diop University, Dakar / Senegal.
M. P. Halsalic
Affiliation:
University of Manchester, Manchester M60 1QD, England.
S. Kimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan.
N. Kobayashi
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan.
T. Iida
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan.
T. Shima
Affiliation:
China University, Chiba-shi, Chiba 263, Japan.
A. Obara
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan.
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Abstract

Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called “g” line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations INA-NDI greater than 2×1017cm−3 . This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 835
Copyright
Copyright © Materials Research Society 1996

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References

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