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High-Density Plasma Etching of Low Dielectric Constant Materials

Published online by Cambridge University Press:  10 February 2011

T. E. F. M. Standaert ,
P. J. Matsuo ,
S. D. Allen ,
G. S. Oehrlein ,
T. J. Dalton ,
T.-M. Lu  and
R. Gutmann
T. E. F. M. Standaert
Affiliation:
Physics Department, University at Albany, State University of New York, Albany, NY 12222
P. J. Matsuo
Affiliation:
Physics Department, University at Albany, State University of New York, Albany, NY 12222
S. D. Allen
Affiliation:
Physics Department, University at Albany, State University of New York, Albany, NY 12222
G. S. Oehrlein
Affiliation:
Physics Department, University at Albany, State University of New York, Albany, NY 12222
T. J. Dalton
Affiliation:
Current address: IBM Microelectronics, Hopewell Junction, NY 12533. Work done while at Digital Equipment Corporation, Hudson, MA 01749
T.-M. Lu
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180-3590
R. Gutmann
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180-3590
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Abstract

The patterning of several novel low dielectric constant (K) materials has been studied in a high-density plasma (HDP) tool. Recent results obtained on oxide-like materials, such as fluorinated oxide, hydrogen silsesquioxane (HSQ), and methyl silsesquioxane (MSQ), are reviewed. These materials can be successfully patterned using a fluorocarbon etching chemistry. The etching is in this case controlled by a thin fluorocarbon film at the surface. The patterning of polymer dielectrics can be performed in an oxygen etching chemistry. As an example, the patterning of Parylene-N in an oxygen chemistry is discussed. In this case, the ion and the oxygen radical flux need to be properly controlled to obtain a directional etching process. After the dielectric etch, either in a fluorocarbon or oxygen based chemistry, fluorocarbons and oxygen contamination remain at the exposed metal surfaces. We recently demonstrated how a plasma treatment following the dielectric etch reduces these contaminants. The results of this treatment on copper surfaces and the resulting modification to the dielectric are reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 265
Copyright
Copyright © Materials Research Society 1998

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References

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