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High-Conductance GaAs Tunnel Diodes by OMVPE

Published online by Cambridge University Press:  16 February 2011

R. Venkatasubramanian ,
M. L. Timmons  and
T. S. Colpitts
R. Venkatasubramanian
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
M. L. Timmons
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
T. S. Colpitts
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
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Abstract

GaAs p+-n+ tunnel diodes have been grown by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE) using zinc as the dopant for the p+ regions and either Se or Si as the dopant for the n+ regions. At a growth temperature of 700° C, using a “cycled” growth for just the Zn-doped p++-GaAs layer both the conductance and the peak current of the tunnel diode has been increased by a factor of ˜65. The conductance of the tunnel diode, maximized at a growth temperature of 650 °C with the cycled growth, is comparable to the best reported values by MBE. Cycled growths for n+ Se-doped regions reduce the tunnel-diode conductance by more than two orders of magnitude. However, the cycled growth for n+-GaAs regions formed with Si doping shows no conductance degradation. A model for these observations is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 163
Copyright
Copyright © Materials Research Society 1991

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References

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