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High-Conductance GaAs Tunnel Diodes by OMVPE
Published online by Cambridge University Press: 16 February 2011
Abstract
GaAs p+-n+ tunnel diodes have been grown by atmospheric-pressure organometallic vapor phase epitaxy (OMVPE) using zinc as the dopant for the p+ regions and either Se or Si as the dopant for the n+ regions. At a growth temperature of 700° C, using a “cycled” growth for just the Zn-doped p++-GaAs layer both the conductance and the peak current of the tunnel diode has been increased by a factor of ˜65. The conductance of the tunnel diode, maximized at a growth temperature of 650 °C with the cycled growth, is comparable to the best reported values by MBE. Cycled growths for n+ Se-doped regions reduce the tunnel-diode conductance by more than two orders of magnitude. However, the cycled growth for n+-GaAs regions formed with Si doping shows no conductance degradation. A model for these observations is presented.
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- Copyright © Materials Research Society 1991
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