Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T07:53:19.691Z Has data issue: false hasContentIssue false
  • English
  • Français

High Temperature Surface Degradation of III-V Nitrides

Published online by Cambridge University Press:  15 February 2011

C. B. Vartuli ,
S. J. Pearton ,
C. R. Abernathy ,
J. D. MacKenzie ,
J. C. Zolper  and
E. S. Lambers
C. B. Vartuli
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
C. R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
J. D. MacKenzie
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185–0603
E. S. Lambers
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
Get access

Abstract

The surface stoichiometry, surface morphology and electrical conductivity of AIN, GaN, InN, InGaN and InAIN was examined at rapid thermal annealing temperatures up to 1150 °C. The sheet resistance of the AIN dropped steadily with annealing, but the surface showed signs of roughening only above 1000 °C. Auger Electron Spectroscopy (AES) analysis showed little change in the surface stoichiometry even at 1150 °C. GaN root mean square (RMS) surface roughness showed an overall improvement with annealing, but the surface became pitted at 1000 °C, at which point the sheet resistance also dropped by several orders of magnitude, and AES confirmed a loss of N from the surface. The InN surface had roughened considerably even at 650 °C, and scanning electron microscopy (SEM) showed significant degradation. In contrast to the binary nitrides the sheet resistance of InAIN was found to increase by ˜ 102 from the as grown value after annealing at 800 °C and then remain constant up to 1000 °C, while that of InGaN increased rapidly above 700 °C. The RMS roughness increased above 800 °C and 700 °C respectively for InAIN and InGaN samples. In droplets began to form on the surface at 900 °C for InAIN and at 800 °C for InGaN, and then evaporate at 1000 °C leaving pits. AES analysis showed a decrease in the N concentration in the top 500 Å of the sample for annealing ≥800 °C in both materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 569
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 30, L1708 (1991).Google Scholar
2. Binari, S.C., Rowland, L.B., Kruppa, W., Kelner, G., Doverspike, K., and Gaskill, D.K., Electron. Lett. 30, 1248 (1994).Google Scholar
3. Khan, M.A., Shur, M.S., and Chen, Q., Electron. Lett. 31, 2130 (1995).Google Scholar
4. Zolper, J.C., Baca, A.G., Shul, R.J., Wilson, R.G., Pearton, S.J. and Stall, R.A., Appl.Phys. Lett. 68, 166 (1996).Google Scholar
5. Vartuli, C.B., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D. and Zolper, J.C., J. Vac. Sci. Technol. B, 13, 2293 (1995).Google Scholar
6. Zolper, J.C., Pearton, S.J., Abernathy, C.R. and Vartuli, C.B., Appl. Phys. Lett. 66, 3043 (1995).Google Scholar
7. Lin, M.E., Ma, Z., Huang, F.Y., Fan, Z.F., Allen, L.H. and Morkoc, H., Appl. Phys. Lett. 64, 1003 (1994).Google Scholar
8. Porowski, S. and Grzegory, I., in Properties of Group III Nitrides, ed. Edgar, J.H. (INSPEC, Stevenage, UK 1994).Google Scholar
9. Zolper, J.C., Hagerott-Crawford, M., Howard, A.J., Rainer, J. and Hersee, S.D., Appl. Phys. Lett. 68, 200 (1996).Google Scholar
10. Lin, M.E., Sverdlov, B.N. and Morkoc, H., Appl. Phys. Lett. 63, 3625 (1993).Google Scholar
11. Abernathy, C.R., Mat. Sci. Eng. Rep. 14, 203 (1995).Google Scholar
12. Marsuka, H.P., and Tietjen, J.J., Appl. Phys. Lett. 15, 327 (1969).Google Scholar
13. Groh, R., Gerey, G., Bartha, L. and Pankove, J.I., Phys. Stat. Solidi A 26, 363 (1974).Google Scholar