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High Temperature Stable WSi2-Contacts on p-6H-Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

Frank Erler ,
Henry Romanus ,
Jörg K. N. Lindner  and
Lothar Spiess
Frank Erler
Affiliation:
Technical University of Ilmenau, Institute of Applied Materials Science, Germany
Henry Romanus
Affiliation:
Technical University of Ilmenau, Institute of Applied Materials Science, Germany
Jörg K. N. Lindner
Affiliation:
University of Augsburg, Institute of Physics, Germany
Lothar Spiess
Affiliation:
Technical University of Ilmenau, Institute of Applied Materials Science, Germany
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Abstract

Amorphous tungsten-silicon layers were deposited by DC co-sputtering and subsequently annealed in an argon atmosphere up to 1325 K to form tetragonal crystalline WSi2. Al-implanted p-6H-SiC exhibits a small depletion area forming an ohmic contact with low specific contact resistance. A modified Circular Transmission Line Model (CTLM), introduced by Marlow & Das [1] and Reeves [2], was used to characterize the electrical properties of the prepared contacts in the range between 300 K and 650 K. Deviations between calculated fieldemission contact resistances and measured contact resistances (ρc=2·10−2 Ωcm2, T=650 K) could be explained by TEM-cross section investigations. These deviations are caused by inhomogeneous contact interfaces originating from technological difficulties during contact preparation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 111
Copyright
Copyright © Materials Research Society 1999

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References

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