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High Temperature Stability of Amorphous TaxCu1-x Diffusion Barriers on GaAs+

Published online by Cambridge University Press:  26 February 2011

J. E. Oh ,
J. J. Pouch ,
D. C. Ingram ,
S. A. Alterovitz  and
J. A. Woollam
J. E. Oh
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588–0511
J. J. Pouch
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
D. C. Ingram
Affiliation:
Universal Energy Systems, Dayton, OH 45432
S. A. Alterovitz
Affiliation:
NASA Lewis Research Center, Cleveland, OH 44135
J. A. Woollam
Affiliation:
Department of Electrical Engineering, University of Nebraska, Lincoln, NE 68588–0511
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Abstract

The x value of the most thermally stable co-sputtered TaxCu1-x alloy films are found to correlate with measured maximum temperature coefficients of resistance as a function of alloy composition. To investigate the possible application of these materials as diffusion barriers for the Au-GaAs system, vacuum annealing and infrared rapid thermal annealing are made over a wide temperature range. Resistivity changes, X-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering measurements are performed to find the metallurgical stabilities of these materials at elevated temperatures.

For high x values, the reaction temperature for TaxCu1-x, in contact with GaAs lies between 500 and 700°C. For Au in contact with TaxCu1-x the TaxCu1-x/GaAs reaction occurs at about 600°C. Amorphous Ta93Cu7 exhibits uniform mixing with surrounding elements, whereas Ta80Cu20 exhibits phase separation.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 563
Copyright
Copyright © Materials Research Society 1987

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Footnotes

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Supported by NASA Lewis Research Center Grant NAG-3–154.

References

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