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High Temperature Photoluminescence and Photoluminescence Excitation Spectroscopy of Er Doped Gallium Nitride

Published online by Cambridge University Press:  10 February 2011

U. Hömmerich ,
Myo Thaik ,
T. Robinson-Brown ,
J. D. MacKenzie ,
C. R. Abemathy ,
S. J. Pearton ,
R. G. Wilson ,
R. N. Schwartz  and
J. M. Zavada
U. Hömmerich
Affiliation:
Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668 [email protected]
Myo Thaik
Affiliation:
Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668 [email protected]
T. Robinson-Brown
Affiliation:
Hampton University, Department of Physics, Research Center for Optical Physics, Hampton, VA 23668 [email protected]
J. D. MacKenzie
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
C. R. Abemathy
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
S. J. Pearton
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
R. N. Schwartz
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
J. M. Zavada
Affiliation:
U.S. Army Research Office, Research Triangle Park, NC 27709
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Abstract

We report results of high temperature photoluminescence and photoluminescence excitation studies of Er doped GaN. Er was doped into GaN either by ion-implantation or during growth by metalorganic molecular beam epitaxy (MOMBE). Using above gap excitation (λex=325nm), GaN:Er showed strong 1.54 μm Er3+ luminescence up to 550K which indicates the potential of this material for high temperature opto-electronic applications. In addition, we performed timeresolved photoluminescence excitation (PLE) measurements over the wavelength range 420 to 680 nm using a Nd:YAG pumped Optical Parametric Oscillator (OPO). Similar to our previous PLE results of Er doped AIN, we observed that Er3+ ions in GaN can be excited either through resonant pumping of Er3+ energy levels or through energy-transfer processes involving defect states. The relative contribution of direct and indirect Er3+ excitation, however, seems to depend on the material preparation method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 685
Copyright
Copyright © Materials Research Society 1998

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