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High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices

Published online by Cambridge University Press:  01 February 2011

Balakrishnan Krishnan ,
Masataka Imura ,
Kazuyoshi Iida ,
Kentaro Nagamatsu ,
Hiroki Sugimura ,
Tetsuya Nagai ,
Takafumi Sumii ,
Fumiaki Mori ,
Akira Bandoh  and
Motoaki Iwaya
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Balakrishnan Krishnan
Affiliation:
[email protected], Meijo University, 21st Century COE-Nano Factory, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan, 81-52-832-1151, 81-520832-1298
Masataka Imura
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Kazuyoshi Iida
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Kentaro Nagamatsu
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Hiroki Sugimura
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Tetsuya Nagai
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Takafumi Sumii
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Fumiaki Mori
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Akira Bandoh
Affiliation:
[email protected], Showa-Denko K.K., Corporate R&D Center, 1-1-1 Ohodai, Midori-ku, Chiba, 267-0056, Japan
Motoaki Iwaya
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Satoshi Kamiyama
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Hiroshi Amano
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
Isamu Akasaki
Affiliation:
[email protected], Meijo Univeristy, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya, 468-8502, Japan
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Abstract

Single crystalline AlN epitaxial layers have been grown on and (0001) sapphire and 6H-SiC substrates by MOVPE technique at high temperatures in the range of 1340-1500°C. The structural qualities of the high temperature grown AlN layers were found to be good as evidenced by X-ray diffraction analyses results. By transmission electron microscopic analysis, dislocation densities of the layers were found to be 6.2 × 107 cm−2 or lower and the formation of dislocation loops was confirmed. High temperature bridge layers of AlN and AlxGa1−xN layers were grown on linear-groove patterned sapphire based AlN templates and 6H-SiC substrates. AlxGa1−xN bridge layers exhibited different growth behaviours depending on the direction of groove patterns on the sub-strates.

Keywords

epitaxyIII-Vtransmission electron microscopy (TEM)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I04-03
Copyright
Copyright © Materials Research Society 2007

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References

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