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High Sensitivity Photochemical Sensors Based on Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

E. Fortunato ,
A. Malik ,
A. Séco ,
A. Maçarico  and
R. Martins
E. Fortunato
Affiliation:
Department of Materials Science, FCT-UNL and Centre of Excellence for Microelectronic and Optoelectronic Processes, UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal, [email protected]
A. Malik
Affiliation:
Department of Materials Science, FCT-UNL and Centre of Excellence for Microelectronic and Optoelectronic Processes, UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal, [email protected]
A. Séco
Affiliation:
Department of Chemistry, ISEL, R. Conselheiro E. Navarro, P-1900 Lisboa, Portugal
A. Maçarico
Affiliation:
Department of Materials Science, FCT-UNL and Centre of Excellence for Microelectronic and Optoelectronic Processes, UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal, [email protected]
R. Martins
Affiliation:
Department of Materials Science, FCT-UNL and Centre of Excellence for Microelectronic and Optoelectronic Processes, UNINOVA, Quinta da Torre, P-2825 Monte de Caparica, Portugal, [email protected]
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Abstract

Hydrogenated amoiphous silicon photochemical sensors based on Pd-MIS structures were produced by Plasma Enhanced Chemical Vapor Deposition with two different oxidized surfaces (thermal and chemical oxidation). The behaviour of dark and illuminated current-voltage characteristics in air and in the presence of a hydrogen atmosphere is explained by the changes induced by the gases in the work function of the metal, modifying the electrical properties of the interface. The photochemical sensors produced present more than 2 orders of magnitude variation on the reverse dark current when in presence of 400 ppm hydrogen to which it corresponds a decrease of 45% on the open circuit voltage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 949
Copyright
Copyright © Materials Research Society 1997

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References

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