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High Resolution Z-Contrast Imaging and Lattice Location Analysis of Dopants in Ion-Implanted Silicon*

Published online by Cambridge University Press:  25 February 2011

S. J. Pennycook ,
J. Narayan ,
R. J. Cijlbertson ,
E. Fogarassy  and
P. E. Batson
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Narayan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
R. J. Cijlbertson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
E. Fogarassy
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
P. E. Batson
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

Two new electron microscopy techniques have been developed which greatly extend the capabilities for the micro-characterization of semiconductors. The first is a technique for the direct imaging of dopants in semiconductors, whether or not they are in solution, using Z-contrast, and the second is a technique for determining the substitutional fraction of dopant. Both techniques are capable of nanometer spatial resolution and allow the detailed study of dopant segregation, precipitation, and clustering effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 41: Symposium K – Advanced Photon and Particle Techniques for the Characterization of Defects in Solids , 1984 , 287
Copyright
Copyright © Materials Research Society 1985

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U.S. Department of Energy under contract DE-ACO5-840R21400 with Martin Marietta Energy Systems, Inc.

References

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8. Pennycook, S. J., Narayan, J., and Holland, O.W., p. 126 in Proc. 41st Annual EMSA Meeting, San Francisco Press, Inc. (1983).Google Scholar