Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-06T10:45:15.275Z Has data issue: false hasContentIssue false

High Resolution X-Ray Diffraction of Hg1-xMnx Te Epitaxial Films

Published online by Cambridge University Press:  25 February 2011

B K Tanner
Affiliation:
Physics Department, University of Durham, South Road, Durham DH1 3LE, U.K.
T D Hallam
Affiliation:
Physics Department, University of Durham, South Road, Durham DH1 3LE, U.K.
M Funaki
Affiliation:
Physics Department, University of Durham, South Road, Durham DH1 3LE, U.K.
A W Brinkman
Affiliation:
Physics Department, University of Durham, South Road, Durham DH1 3LE, U.K.
Get access

Abstract

Epitaxial films of Hg1-xMnxTe (MMT) have been grown by direct alloy growth MOVPE. Perfection of layers grown on CdTe buffered GaAs, and unbuffered CdZnTe substrates has been assessed by double axis X-ray diffraction. No significant difference was observed in the rocking curve full width at half maximum (FWHM) between layers grown on the two types of substrate. Rocking curves taken as a function of position across the layer showed substantial variation, there being a very good correlation between layer thickness determined from the intensity of the substrate peak, layer rocking curve FWHM and Mn composition determined from the substrate and layer peak splitting. The contour maps of these parameters are discussed in terms of depletion of the DIPTe precursor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Rogalski, A., Infrared Physics 31, 117 (1991)CrossRefGoogle Scholar
[2] Clifton, P. A., Brinkman, A. W. and Al-Allak, H. M., Semicond. Sci. Tech. 5, 1067 (1990)CrossRefGoogle Scholar
[3] Al-Allak, H. M., Brinkman, A. W., Clifton, P. A. and Brown P D, P. D., Mater. Res. Soc. Symp. Proc. 216, 35 (1991)CrossRefGoogle Scholar
[4] Funaki, M., Lewis, J. E., Hallam, T. D., Li, Chaorong, Haider, S. K., Brinkman, A. W. and Tanner, B. K., Semicond. Sci. Tech. (1992) in pressGoogle Scholar
[5] Hallam, T. D., Haider, S. K., Hudson, J. M., Li, C. R., Funaki, M., Lewis, J. E., Brinkman, A. W. and Tanner, B. K., J. Phys. D (Appl. Phys.) (1993) in pressGoogle Scholar
[6] Irvine, S. J. C. and Mullin, J. B., J. Crystal Growth 55, 107 (1981)CrossRefGoogle Scholar
[7] Tunnicliffe, J., Irvine, S. J. C., Dosser, O. D. and Mullin, J. B.. J. Crystal Growth 68, 245 (1984)CrossRefGoogle Scholar