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High Resolution X-ray Diffraction of GaN Grown on Sapphire Substrates

Published online by Cambridge University Press:  10 February 2011

A. Saxler ,
M. A. Capano ,
W. C. Mitchel ,
P. Kung ,
X. Zhang ,
D. Walker  and
M. Razeghi
A. Saxler
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, [email protected] Wright Laboratory, Materials Directorate, Wright-Patterson AFB, OH, 45433–7707
M. A. Capano
Affiliation:
Wright Laboratory, Materials Directorate, Wright-Patterson AFB, OH, 45433–7707
W. C. Mitchel
Affiliation:
Wright Laboratory, Materials Directorate, Wright-Patterson AFB, OH, 45433–7707
P. Kung
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, [email protected]
X. Zhang
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, [email protected]
D. Walker
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, [email protected]
M. Razeghi
Affiliation:
ECE Department, Northwestern University, Evanston, IL 60208, [email protected]
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Abstract

X-ray rocking curves are frequently used to assess the structural quality of GaN thin films. In order to understand the information given by the line shape, we need to know the primary mechanism by which the curves are broadened. The GaN films used in this study were grown by low pressure metalorganic chemical vapor deposition (MOCVD) on (00•1) sapphire substrates. GaN films with both broad and very narrow (open detector linewidth of 40 arcseconds for the (00•2) GaN reflection) rocking curves are examined in this work. Reciprocal space maps of both symmetric and asymmetric reciprocal lattice points are used to determine that the cause of the broadening of GaN rocking curves is a limited in-plane coherence length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 477
Copyright
Copyright © Materials Research Society 1997

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References

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