Hostname: page-component-6bf8c574d5-9nwgx Total loading time: 0 Render date: 2025-02-18T06:40:34.623Z Has data issue: false hasContentIssue false
  • English
  • Français

High Resolution X-ray Diffraction from Epitaxial Gallium Nitride Films

Published online by Cambridge University Press:  10 February 2011

T. Lafford ,
N. Loxley  and
BK Tanner
T. Lafford
Affiliation:
Bede Scientific, Bowburn, Durham, DH6 5PF, U.K
N. Loxley
Affiliation:
Bede Scientific, Bowburn, Durham, DH6 5PF, U.K
BK Tanner
Affiliation:
also Department of Physics, Durham University, South Road, Durham, DHI 3LE, U.K.
Get access

Abstract

The width of double axis X-ray rocking curves of epitaxial GaN layers is shown to be critically dependent on the width of the detector aperture. We show that triple axis diffraction measurements using a crystal analyser before the detector enables the instrument function to be defined and the tilt and dilation distributions separated. All GaN samples examined showed a mosaic structure of misoriented sub-grains with little dilation within the mosaic blocks. In reciprocal space maps this was revealed as a wide distribution of intensity in a direction perpendicular to the reciprocal lattice vector.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 483
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tanner, B.K. and Bowen, D.K., J. Crystal Growth 126 1 (1993)Google Scholar
2. Nakamura, S., Japan. J. Appl. Phys. 35 L74 (1996)Google Scholar
3. He, Z.Q., Ding, X.M., Hou, X.Y. and Wang, X., Appl. Phys. Lett 64 315 (1994)Google Scholar
4. Fertitta, K.G., Holmes, A.L., Neff, J.G., Ciuba, F.J. and Dupuis, R.D., Appl. Phys. Lett. 65 1823 (1994)Google Scholar
5. Leszczynski, M., Teissevre, H., Suski, T., Grzergory, I., Bockowski, M., Jun, J., Porowski, S., Pakula, K., Baranowski, J.M., Foxon, C.T. and Cheng, T.S., Appl. Phys. Lett. 69 73 (1996)Google Scholar
6. Leszczynski, M., Grzergory, I., Bockowski, M., Jun, J., Porowski, S. and Baranowski, J.M., Acta Phys. Polonica A 88 799 (1995)Google Scholar
7. Bowen, D.K., Loxley, N. and Tanner, B.K., Mater. Res. Soc. Symp. Proc. 208 119 (1991)Google Scholar
8. Cockerton, S. Cooke, M.L., Bowen, D.K. and Tanner, B.K. Mater. Res. Soc. Symp. Proc. (1996)Google Scholar
9. duMond, J.W. Phys. Rev. 52 872 (1937)Google Scholar
10. Bartels, W.J. J. Vacuum Sci. Tech. B1 338 (1983)Google Scholar
11. Loxley, N., Bowen, D.K. and Tanner, B.K., J. Appl. Cryst. 28 314 (1995)Google Scholar
12. Tanner, B.K., in: Semiconductor Characterisation; Present Status and Future Needs eds. Bullis, W.M., Seiler, D.G. and Diebold, A.C. (Am. Inst. Phys., Woodbury, New York) p.263 (1995)Google Scholar